HOSOI Takuji
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Graduating School 【 display / non-display 】
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Graduating School:Osaka University
Faculty:Faculty of Engineering
Course / Major:応用自然科学科
Kind of school:University
Date of graduation:1999.03
Completion status:Graduated
Country location code:Japan
Graduate School 【 display / non-display 】
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Graduate school:Osaka University
Department:Graduate School, Division of Engineering
Course:電子情報エネルギー工学専攻
Course completed:Doctor's Course
Date of completion:2004.03
Completion status:Accomplished credits for doctoral program
Country:Japan -
Graduate school:Osaka University
Department:Graduate School, Division of Engineering
Course:物質・生命工学専攻
Course completed:Master's Course
Date of completion:2001.03
Completion status:Completed
Country:Japan
Degree 【 display / non-display 】
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Degree name:博士(工学)
Classified degree field:Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electron device and electronic equipment
Conferring institution:Osaka University
Acquisition way:Coursework
Date of acquisition:2005.03 -
Degree name:修士(工学)
Classified degree field:Nanotechnology/Materials / Thin film/surface and interfacial physical properties
Conferring institution:Osaka University
Acquisition way:Coursework
Date of acquisition:2001.03 -
Degree name:学士(工学)
Classified degree field:Nanotechnology/Materials / Thin film/surface and interfacial physical properties
Conferring institution:Osaka University
Acquisition way:Coursework
Date of acquisition:1999.03
Career 【 display / non-display 】
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Affiliation:Kwansei Gakuin University
Department:School of Engineering Program of Electrical and Electronic Engineering
Title:Associate Professor
Date:2021.04 - -
Affiliation:Osaka University
Department:大学院工学研究科 物理学系専攻
Title:Assistant Professor
Date:2020.04 - 2021.03 -
Affiliation:Osaka University
Department:大学院工学研究科 生命先端工学専攻
Title:Assistant Professor
Date:2007.04 - 2020.03 -
Affiliation:Hiroshima University
Department:ナノデバイス・システム研究センター
Title:Postdoctoral Fellow
Date:2004.04 - 2007.03
Association Memberships 【 display / non-display 】
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Academic society name:International Workshop on Junction Technology
Academic country located:Japan -
Academic society name:International Conference on Solid State Devices and Materials
Academic country located:Japan -
Academic society name:International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES
Academic country located:Japan -
Academic society name:電子情報通信学会 シリコン材料・デバイス(SDM)研究会
Academic country located:Japan -
Academic society name:電子デバイス界面テクノロジー研究会
Academic country located:Japan
Research Areas 【 display / non-display 】
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Research field:Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electric and electronic materials
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Research field:Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electron device and electronic equipment
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Research field:Nanotechnology/Materials / Thin film/surface and interfacial physical properties
Papers 【 display / non-display 】
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Title: Density functional theory study on the effect of NO annealing for SiC(0001) surface with atomic-scale steps
Journal name: APPLIED PHYSICS EXPRESS vol.17 (1)
Date of publication: 2024.01
Author(s): Uemoto Mitsuharu, Funaki Nahoto, Yokota Kazuma, Hosoi Takuji, Ono TomoyaDOI: 10.35848/1882-0786/ad1bc3
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Title: Controllability of luminescence wavelength from GeSn wires fabricated by laser-induced local liquid phase crystallization on quartz substrates
Journal name: JAPANESE JOURNAL OF APPLIED PHYSICS vol.62 (SC)
Date of publication: 2023.04
Author(s): Shimura Takayoshi, Yamaguchi Ryoga, Tabuchi Naoto, Kondoh Masato, Kuniyoshi Mizuki, Hosoi Takuji, Kobayashi Takuma, Watanabe HeijiDOI: 10.35848/1347-4065/acb9a2
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Title: Fabrication and Luminescence Characterization of Ge Wires with Uniaxial Tensile Strains Applied using Internal Stresses in Deposited Metal Thin Films
Journal name: JOURNAL OF ELECTRONIC MATERIALS
Date of publication: 2023.03
Author(s): Shimura Takayoshi, Tanaka Shogo, Hosoi Takuji, Watanabe HeijiDOI: 10.1007/s11664-023-10309-w
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Title: Impact of post-nitridation annealing in CO2 ambient on threshold voltage stability in 4H-SiC metal-oxide-semiconductor field-effect transistors
Journal name: APPLIED PHYSICS EXPRESS vol.15 (6)
Date of publication: 2022.06
Author(s): Hosoi Takuji, Ohsako Momoe, Moges Kidist, Ito Koji, Kimoto Tsunenobu, Sometani Mitsuru, Okamoto Mitsuo, Yoshigoe Akitaka, Shimura Takayoshi, Watanabe HeijiDOI: 10.35848/1882-0786/ac6f42
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Title: Characterization of Electron Traps in Gate Oxide of SiC MOS Capacitors
Journal name: 2022 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS)
Date of publication: 2022
Author(s): Terao Yutaka, Hosoi Takuji, Takashima Shinya, Kobayashi Takuma, Shimura Takayoshi, Watanabe Heiji
Research Projects 【 display / non-display 】
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Research category:Grant-in-Aid for Scientific Research(B)
Title:GeSn赤外センシングプラットフォームの創出
Project summary:GeSn半導体は赤外域の発光/受光素子および高移動度CMOS材料として有望である。本研究では、非晶質透明基板上でのGeSn単結晶液相成長技術を発展させ、結晶欠陥・不純物を極限まで低減した高品質GeSn形成、そしてSn組成傾斜をつけたGeSn横型ダブルへテロ構造の作製に取り組み、GeSn赤外光学素子とCMOS回路を集積化した赤外イメージング/センシングプラットフォームの創出を目指す。
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Research category:Grant-in-Aid for Young Scientists(A)
Project year:2012.04 - 2015.03
Title:ショットキー接合型SiCプラズモニックトランジスタの創製
Project summary:SiC特有の動作原理に基づく低損失SiCパワーMOSトランジスタの創製を目的とし、そのための技術課題として金属/SiC界面の接合特性とMOS界面特性の制御に取り組んだ。まずデバイスシミュレーションにより、良好なデバイス動作の実現には金属/SiC接合のショットキー障壁高さを0.3 eV以下にする必要があることを示した。次に、4H-SiCの電子親和力(3.6 eV)よりも真空仕事関数の低いBaを電極材料として検討したところ、Baの反応性の高さに起因する特性変動が激しく評価そのものが困難であったが、Ba層を薄膜化しAlキャップ層を積層することで仕事関数3.1 eVで安定した電極構造を実現した。
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Research category:Grant-in-Aid for Young Scientists(B)
Project year:2009.04 - 2011.03
Title:レーザーアニールによる選択的局所GOI構造作製技術の開発
Project summary:次世代半導体基板として期待されるGOI(Germanium-On-Insulator)もしくはSGOI(SiliconGermanium-On-Insulator)構造をSi 基板上に局所選択的に作製する手法として、アモルファスGe層を融解・凝固させる液相エピタキシャル成長を提案し、単結晶Geワイヤと結晶性に優れた完全歪緩和SGOI層をそれぞれ絶縁層上に形成することに成功した。
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Research category:Grant-in-Aid for challenging Exploratory Research
Project year:2009.04 - 2011.03
Title:二重接合自己組織化金属ナノ粒子単電子フラッシュメモリの開発
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Project year:2007.09 - 2011.08
Title:次世代半導体デバイス特性劣化の物理モデルに基づくプロセスガイドラインと信頼性評価手法の開発
Awarding organization:Ministry of Economy, Trade and Industry
System name:平成19年度NEDO産業技術研究助成事業
Committee Memberships 【 display / non-display 】
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Organization name:応用物理学会 先進パワー半導体分科会
Committee name:企画幹事
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Organization name:International Conference on Solid State Devices and Materials
Committee name:TPC secretary
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Organization name:応用物理学会
Committee name:機関誌『応用物理』編集委員
Date:2020.04 - 2022.03 -
Organization name:応用物理学会 先進パワー半導体分科会
Committee name:庶務幹事
Date:2019.04 - 2021.03 -
Organization name:International Conference on Silicon Carbide and Related Materials (ICSCRM2019)
Committee name:実行委員(庶務)
Date:2019