HIBINO Hiroki
ところが、現状、産業応用に適した大面積で高品質な二次元物質の合成法は確立されていません。本研究室では、二次元物質の結晶成長の様子をナノメートルスケールで顕微鏡観察することを通して、成長機構を解明するとともに、高品質な結晶成長法を確立します。また、二次元物質では、端や結晶粒界などの欠陥が、物性に大きな影響を及ぼします。このことは、逆に、欠陥を介した物性制御の可能性を示しています。そこで、構造と物性を同時計測可能な顕微鏡を用い、欠陥の物性影響を解明し、物性制御の指針を獲得することに取り組みます。将来は、高品質な結晶成長と物性制御の技術に基づき、二次元物質を用いて、社会の持続的発展に役立つ革新的な素子を開拓したいと考えています。
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Graduating School 【 display / non-display 】
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Graduating School:The University of Tokyo
Faculty:Faculty of Science
Course / Major:Department of Physics
Kind of school:University
Date of graduation:1987.03
Completion status:Graduated
Country location code:Japan
Graduate School 【 display / non-display 】
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Graduate school:The University of Tokyo
Department:Graduate School, Division of Science
Course:Deparment of Physics
Course completed:Master's Course
Date of completion:1989.03
Completion status:Completed
Country:Japan
Studying abroad experiences 【 display / non-display 】
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Name of institution: Arizona State University
Name of job or career: Visiting research professor
Date: 2000.01 - 2001.01
Degree 【 display / non-display 】
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Degree name:PhD, Pure and Applied Physics
Classified degree field:Nanotechnology/Materials / Thin film/surface and interfacial physical properties
Conferring institution:Waseda University
Acquisition way:Thesis
Date of acquisition:2006.02
Career 【 display / non-display 】
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Affiliation:Kyushu University
Title:Professor
Date:2019.10 - 2020.03 -
Affiliation:The University of Tokyo
Title:Visiting Professor
Date:2011.04 - 2015.03 -
Affiliation:Kyushu University
Title:Visiting Professor
Date:2009.04 - 2010.03 -
Affiliation:Tokyo Institute of Technology
Title:Visiting Professor
Date:2007.04 - 2015.03 -
Affiliation:Nippon Telegraph and Telephone Corporation
Department:NTT Basic Research Laboratories
Title:Researcher
Date:1989.04 - 2015.03
Association Memberships 【 display / non-display 】
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Academic society name:応用物理学会
Academic country located:Japan -
Academic society name:物理学会
Academic country located:Japan -
Academic society name:結晶成長学会
Academic country located:Japan -
Academic society name:表面科学会
Academic country located:Japan
Research Areas 【 display / non-display 】
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Research field:Nanotechnology/Materials / Nanostructural physics
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Research field:Nanotechnology/Materials / Thin film/surface and interfacial physical properties
Papers 【 display / non-display 】
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Language: English
Title: Improving optoelectronic properties of InP/InAs nanowire pin devices with telecom-band electroluminescence
Journal name: Optics Continuum vol.3 (2) (p.176 - 186)
Date of publication: 2024.02
Author(s): Guoqiang Zhang, Kouta Tateno, Satoshi Sasaki, Takehiko Tawara, Hiroki Hibino, Hideki Gotoh, Haruki SanadaDOI: 10.1364/OPTCON.511645
Type of publication: Research paper (scientific journal)
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Language: English
Title: Preface for the Special Issue of ALC’22
Journal name: e-Journal of Surface Science and Nanotechnology vol.21 (3) (p.A1)
Date of publication: 2023.12
Author(s): Shigekawa Hidemi, Daimon Hiroshi, Hibino HirokiDOI: 10.1380/ejssnt.2023-069
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Title: Control of rotation angles of multilayer graphene on SiC (000(1)over-bar) by substrate off-direction and angle
Journal name: JOURNAL OF PHYSICS-CONDENSED MATTER vol.35 (38)
Date of publication: 2023.09
Author(s): Sakakibara Ryotaro, Bao Jianfeng, Hayashi Naoki, Ito Takahiro, Hibino Hiroki, Norimatsu WataruDOI: 10.1088/1361-648X/acdebf
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Title: Influence of substrate sapphire orientation on direct CVD growth of graphene
Journal name: JAPANESE JOURNAL OF APPLIED PHYSICS vol.62 (8)
Date of publication: 2023.08
Author(s): Kawai Yoshikazu, Nakao Takuto, Oda Takato, Ohtani Noboru, Hibino HirokiDOI: 10.35848/1347-4065/acea0b
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Title: Core-level photoelectron spectroscopy study on the buffer-layer formed in approximately atmospheric pressure argon on n-type and semi-insulating SiC(0001)
Journal name: SURFACE SCIENCE vol.733
Date of publication: 2023.07
Author(s): Maeda Fumihiko, Takamura Makoto, Hibino HirokiDOI: 10.1016/j.susc.2023.122292
Industrial Property Rights 【 display / non-display 】
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Property type:Patent
Title:ヘテロ構造およびその作製方法
Inventor(s)/Creator(s):日比野 浩樹
Application number:特願2020-121855, 2020.07.16
Publication number:特開2022-018623, 2021.01.27
Country:Japan
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Property type:Patent
Title:結晶成長方法
Inventor(s)/Creator(s):日比野 浩樹
Application number:特願2017-036173, 2017.02.28
Publication number:特開2018‐140897, 2018.09.13
Patent/Registration number:特許第6675648号,
Country:Japan
Research Projects 【 display / non-display 】
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Research category:Grant-in-Aid for Scientific Research(B)
Project year:2021.04 - 2024.03
Title:結晶成長による2Dヘテロ構造のデザイン