Personnel Information

写真b

DOJIMA Daichi

Organization
School of Engineering
Date of Birth
1990
Laboratory Address
2-1 Gakuen, Sanda, Hyogo
Research Fields, Keywords
AlN, Crystal growth, Graphene, Semiconductor materials, SiC, Thermal etching, 熱エッチング、半導体材料、SiC、AlN、グラフェン, 結晶成長
Teaching and Research Fields
Heteroepitaxial growth of high quality aluminum nitride (AlN) using innovative silicon carbide (SiC) processing and nano-surface control technologies.
Mail Address
d.dojima@kwansei.ac.jp
Laboratory Phone number
+81-79-565-9727
Syllabus information URL
https://syllabus.kwansei.ac.jp/uniasv2/UnSSOLoginControlFree?REQ_ACTION_DO=/AGA030PLS01Action.do?REQ_FUNCTION_JUMP_START_FLG=1&SLB_LINK_DISP_FLG=689&TCH_NO=216102&REQ_PRFR_FUNC_ID=AGA030
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Degree 【 display / non-display 】

  • Degree name:修士（理学）
    Classified degree field:Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Power engineering
    Conferring institution:Kwansei Gakuin University
    Acquisition way:Coursework
    Date of acquisition:2016.03

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Papers 【 display / non-display 】

  • Language: English
    Title: In-situ growth modecontrol of AlN on SiC substrate by sublimation closed space technique
    Journal name: Journal of Crystal Growth  vol.483  (p.206 - 210)
    Date of publication: 2017.11
    Author(s): Daichi Dojima, Koji Ashida, Tadaaki Kaneko

    DOI: 10.1016/j.jcrysgro.2017.11.032
    Type of publication: Research paper (scientific journal)
    Co-author classification: Multiple Authorship
    Field of experts:Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electric and electronic materials

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  • Language: English
    Title: Interactions Between Epitaxial Graphene Grown on the Si- and C-Faces of 4H-SiC Investigated Using Raman Imaging and Tip-Enhanced Raman Scattering
    Journal name: APPLIED SPECTROSCOPY  vol.74  (11)  (p.1384 - 1390)
    Date of publication: 2020.11
    Author(s): Uemura Shohei, Vantasin Sanpon, Kitahama Yasutaka, Tanaka Yoshito Yannick, Suzuki Toshiaki, Doujima Daichi, Kaneko Tadaaki, Ozaki Yukihiro

    DOI: 10.1177/0003702820944247
    Type of publication: Research paper (scientific journal)
    Co-author classification: Multiple Authorship

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  • Language: English
    Title: Evaluation of Polishing-Induced Subsurface Damage of 4H-SiC (0001) by Cross-Sectional Electron Backscattered Diffraction and Synchrotron X-Ray Micro-Diffraction
    Journal name: MRS ADVANCES  vol.1  (55)  (p.3697 - 3702)
    Date of publication: 2016
    Author(s): Ashida Koji, Dojima Daichi, Kutsuma Yasunori, Torimi Satoshi, Nogami Satoru, Imai Yasuhiko, Kimura Shigeru, Mizuki Jun-ichiro, Ohtani Noboru, Kaneko Tadaaki

    DOI: 10.1557/adv.2016.433
    Type of publication: Research paper (scientific journal)
    Co-author classification: Multiple Authorship

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  • Language: English
    Title: Characterization of SiC-grown epitaxial graphene microislands using tip-enhanced Raman spectroscopy
    Journal name: PHYSICAL CHEMISTRY CHEMICAL PHYSICS  vol.17  (43)  (p.28993 - 28999)
    Date of publication: 2015
    Author(s): Vantasin Sanpon, Tanaka Yoshito, Uemura Shohei, Suzuki Toshiaki, Kutsuma Yasunori, Doujima Daichi, Kaneko Tadaaki, Ozaki Yukihiro

    DOI: 10.1039/c5cp05014f
    Type of publication: Research paper (scientific journal)
    Co-author classification: Multiple Authorship

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Industrial Property Rights 【 display / non-display 】

  • Property type:Patent
    Title:温度分布評価方法及び温度分布評価装置
    Inventor(s)/Creator(s):金子忠昭，堂島大地，芦田晃嗣，井原知也，他

    Application number:PCT/JP2020/017644, 2020.04.24
    Country:

  • Property type:Patent
    Title:温度分布評価方法及び温度分布評価装置
    Inventor(s)/Creator(s):金子忠昭，堂島大地，芦田晃嗣，井原知也，他

    Application number:TW109113845, 2020.04.24
    Country:Taiwan, Province of China

  • Property type:Patent
    Title:ＳｉＣ半導体基板及びその製造方法及びその製造装置
    Inventor(s)/Creator(s):金子忠昭，堂島大地，芦田晃嗣，井原知也，他

    Application number:特願2020-556059, 2019.11.05
    Country:Japan

  • Property type:Patent
    Title:ＳｉＣ半導体基板及びその製造方法及びその製造装置
    Inventor(s)/Creator(s):金子忠昭，堂島大地，芦田晃嗣，井原知也，他

    Application number:ＴＷ108140004, 2019.11.05
    Country:Taiwan, Province of China

  • Property type:Patent
    Title:ＳｉＣ半導体基板及びその製造方法及びその製造装置
    Inventor(s)/Creator(s):金子忠昭，堂島大地，芦田晃嗣，井原知也，他

    Application number:PCT/JP2019/43203, 2019.11.05
    Country:

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