Degree 【 display / non-display 】

Degree 【 display / non-display 】

• Degree name:Doctor of Philosophy
  Classified degree field:Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electric and electronic materials
  Acquisition way:Coursework
  Date of acquisition:1993.07

Career 【 display / non-display 】

Career 【 display / non-display 】

• Affiliation:Kwansei Gakuin University
  Department:School of Science and Technology Department of Nanotechnology for Sustainable Energy
  Title:Professor
  Date:2015.04 -

• Affiliation:Kwansei Gakuin University
  Department:School of Science and Technology Department of Physics
  Title:Professor
  Date:2011.04 - 2015.03

• Affiliation:Kwansei Gakuin University
  Department:Department reports to President
  Title:Professor
  Date:2008.04 - 2011.03

Association Memberships 【 display / non-display 】

Association Memberships 【 display / non-display 】

• Academic society name:応用物理学会
  Academic country located:Japan

• Academic society name:日本物理学会
  Academic country located:Japan

• Academic society name:日本結晶成長学会
  Academic country located:Japan

• Academic society name:The Electrochemical Society
  Academic country located:United States

Research Areas 【 display / non-display 】

Research Areas 【 display / non-display 】

• Research field:Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electric and electronic materials
  

Papers 【 display / non-display 】

Papers 【 display / non-display 】

• Title: Analysis of diamond dislocations by Raman polarization measurement
  Journal name: DIAMOND AND RELATED MATERIALS  vol.140
  Date of publication: 2023.12
  Author(s): Takeuchi Marika, Yasuoka Mikitaka, Ishii Marino, Ohtani Noboru, Shikata Shinichi

  DOI: 10.1016/j.diamond.2023.110510
  

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• Title: Influence of substrate sapphire orientation on direct CVD growth of graphene
  Journal name: JAPANESE JOURNAL OF APPLIED PHYSICS  vol.62  (8)
  Date of publication: 2023.08
  Author(s): Kawai Yoshikazu, Nakao Takuto, Oda Takato, Ohtani Noboru, Hibino Hiroki

  DOI: 10.35848/1347-4065/acea0b
  

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• Title: Experimental and simulation studies of surface segregation-limited nitrogen incorporation at the growth front of physical vapor transport-grown 4H-SiC crystals
  Journal name: JOURNAL OF APPLIED PHYSICS  vol.134  (4)
  Date of publication: 2023.07
  Author(s): Ota Takuto, Asano Shunsuke, Inoue Yuta, Ohtani Noboru

  DOI: 10.1063/5.0156457
  

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• Title: Seed surface orientation dependence of the defect formation at the initial stage of physical vapor transport growth of 4H-SiC crystals
  Journal name: JOURNAL OF CRYSTAL GROWTH  vol.597
  Date of publication: 2022.11
  Author(s): Yodo Mikako, Nakai Asahi, Tamura Shungo, Ohtani Noboru

  DOI: 10.1016/j.jcrysgro.2022.126856
  

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• Title: Effect of surface irregularities on diamond Schottky barrier diode with threading dislocations (vol 127, 109188, 2022)
  Journal name: DIAMOND AND RELATED MATERIALS  vol.128
  Date of publication: 2022.10
  Author(s): Mikata N., Takeuchi M., Ohtani N., Ichikawa K., Teraji T., Shikata S.

  DOI: 10.1016/j.diamond.2022.109262
  

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Books 【 display / non-display 】

Books 【 display / non-display 】

• Language: Japanese
  Title: OHM大学テキスト 固体物性工学
  Publisher: オーム社
  Date of publication: 2012.10
  Author(s): 大谷 昇
  

  Type of books: Scholarly book
  Authorship：Joint author
  

• Language: Japanese
  Title: 半導体SiC 技術と応用 第2版
  Publisher: 日刊工業新聞社
  Date of publication: 2011.09
  Author(s): 松波弘之、大谷昇、木本恒暢、中村孝
  

  Type of books: Scholarly book
  Authorship：Joint author
  

• Language: Japanese
  Title: 『次世代パワー半導体－省エネルギー社会に向けたデバイス開発の最前線－』第1章、第1編、第1節
  Publisher: 株式会社エヌ・ティー・エス
  Date of publication: 2009.10
  Author(s): 大谷 昇
  

  Type of books: Scholarly book
  Authorship：Joint author
  

• Language: Japanese
  Title: 『パワーエレクトロニクスの新展開』第1章、第2節 「SiC単結晶基板の高品質化技術」
  Publisher: シーエムシー出版
  Date of publication: 2009.09
  Author(s): 大谷 昇
  

  Type of books: Scholarly book
  Authorship：Joint author
  

• Language: English
  Title: Wide Bandgap Semiconductors – Fundamental Properties and Modern Photonic and Electronic Devices
  Publisher: Springer, Berlin
  Date of publication: 2007.04
  Author(s): N. Ohtani　edited by Kiyoshi Takahashi, Akihiko Yoshikawa, Adarsh Sandhu
  

  Type of books: Scholarly book
  Authorship：Joint author
  

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Industrial Property Rights 【 display / non-display 】

Industrial Property Rights 【 display / non-display 】

• Property type:Patent
  Title:METHOD FOR TREATING SURFACE OF SILICON-CARBIDE SUBSTRATE
  Inventor(s)/Creator(s):Tadaaki Kaneko，Noboru Ohtani,Kenta Hagiwara
  

  Application number:15/096596, 2014.06.06
  Country:United States
  

• Property type:Patent
  Title:半導体ウエハの製造方法及び半導体ウエハ
  Inventor(s)/Creator(s):金子忠昭，大谷昇，牛尾昌史，他
  

  Application number:PCT/JP2012/005301, 2012.08.24
  Country:
  

• Property type:Patent
  Title:METHOD FOR MANUFACTURING SEMICONDUCTOR WAFER AND SEMICONDUCTOR WAFER
  Inventor(s)/Creator(s):Tadaaki Kaneko，Noboru Ohtani,Shoji Ushio，他
  

  Application number:14/240,710, 2012.08.24
  Patent/Registration number:US9,029,219, 2015.05.12
  Country:United States
  

• Property type:Patent
  Title:半導体装置、オーミック電極の形成方法、半導体装置の製造方法
  Inventor(s)/Creator(s):金子忠昭，大谷昇，牛尾昌史，他
  

  Application number:特願2012-052231, 2012.03.08
  Country:Japan
  

• Property type:Patent
  Title:半導体ウエハの製造方法及び半導体ウエハ
  Inventor(s)/Creator(s):金子忠昭，大谷昇，牛尾昌史，他
  

  Application number:特願2011-185181, 2011.08.26
  Publication number:特許第5875143号, 2016.01.29
  Country:Japan
  

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Presentations 【 display / non-display 】

Presentations 【 display / non-display 】

• Language:English
  Conference name:European Conference on Silicon Carbide and Related Materials 2014 (ECSCRM2014)
  International/Domestic presentation:International presentation
  Holding date：2014.09
  Title:Structural and electrical characterization of the initial stage of physical vapor transport growth of 4H-SiC crystals
  Presentation type:Oral presentation (invited, special)
  

• Language:English
  Conference name:The 6th International Workshop on Crystal Growth Technology (IWCGT-6)
  International/Domestic presentation:International presentation
  Holding date：2014.06
  Title:SiC epitaxial substrate: present status and prospect
  Presentation type:Oral presentation (invited, special)
  

• Language:English
  Conference name:European project NetFiSiC -Marie Curie Initial Training Network Tutorial Seminar
  International/Domestic presentation:International presentation
  Holding date：2012.09
  Title:Present status of SiC bulk crystal growth.
  Presentation type:Oral presentation (invited, special)
  

• Language:English
  Conference name:220th The Electrochemical Society Meeting
  International/Domestic presentation:International presentation
  Holding date：2011.10
  Title:Toward the reduction of performance-limiting defects in SiC epitaxial substrates.
  Presentation type:Oral presentation (invited, special)
  

• Language:Japanese
  Conference name:Electronic Journal第622回Technical Seminar
  International/Domestic presentation:Domestic presentation
  Holding date：2010.11
  Title:SiC単結晶ウェーハ製造技術★徹底解説
  Presentation type:Oral presentation (invited, special)
  

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