Personnel Information

写真b

KUZUHARA MASAAKI

Organization
School of Engineering Program of Electrical and Electronic Engineering
Research Fields, Keywords
電子デバイス, 窒化物半導体, シミュレーション, Electron Devices, III-Nitride Semiconductors, Device Simulation, Semiconductor Device, 半導体デバイス
Teaching and Research Fields
Research and development of GaN-based field effect transistors for high-frequency and high-voltage applications.
SDGs Related Goals

Graduating School 【 display / non-display

  • Graduating School:Kyoto University
    Faculty:Faculty of Engineering
    Course / Major:Electrical Engineering

    Kind of school:University
    Date of graduation:1979.03
    Completion status:Graduated
    Country location code:Japan

Graduate School 【 display / non-display

  • Graduate school:Kyoto University
    Department:Graduate School, Division of Engineering
    Course:Electrical Engineering

    Course completed:Master's Course
    Date of completion:1981.03
    Completion status:Completed
    Country:Japan

Studying abroad experiences 【 display / non-display

  • Name of institution: University of Illinois
    Name of job or career: Researcher
    Date: 1987.08 - 1988.08

Degree 【 display / non-display

  • Degree name:Doctor(Engineering)
    Classified degree field:Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electron device and electronic equipment
    Conferring institution:Kyoto University
    Acquisition way:Thesis
    Date of acquisition:1991.03

Career 【 display / non-display

  • Affiliation:Fukui University
    Department:工学部
    Title:Professor
    Date:2004.04 - 2020.03

Association Memberships 【 display / non-display

  • Academic society name:IEEE
    Academic country located:United States

  • Academic society name:電子情報通信学会
    Academic country located:Japan

  • Academic society name:応用物理学会
    Academic country located:Japan

Research Areas 【 display / non-display

  • Research field:Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electron device and electronic equipment

  • Research field:Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electron device and electronic equipment

Research Career 【 display / non-display

  • Research subject: III-V Compound Semiconductor Devices

    Periods of research: 2019.04 -
    Keyword in research subject:Electron Devices
    Field of experts:Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electron device and electronic equipment
    Classification of research form:Collaboration in Japan
    Research program:Grant-in-Aid for Scientific Research

    Description of research activity:GaN-HEMTの高耐圧化と高周波化を進め、準ミリ波帯でワット級の高効率電力増幅器を実現する。

Papers 【 display / non-display

  • Title: Evidence of reduced interface states in Al2O3/AlGaN MIS structures via insertion of ex situ regrown AlGaN layer
    Journal name: APPLIED PHYSICS EXPRESS  vol.15  (10)
    Date of publication: 2022.10
    Author(s): Baratov Ali, Kawabata Shinsaku, Urano Shun, Nagase Itsuki, Ishiguro Masaki, Maeda Shogo, Igarashi Takahiro, Nezu Toi, Yatabe Zenji, Matys Maciej, Kachi Tetsu, Adamowicz Boguslawa, Wakejima Akio, Kuzuhara Masaaki, Yamamoto Akio, Asubar Joel T.

    DOI: 10.35848/1882-0786/ac8f13

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  • Title: Stoichiometric imbalances in Mg-implanted GaN
    Journal name: JAPANESE JOURNAL OF APPLIED PHYSICS  vol.60  (6)
    Date of publication: 2021.06
    Author(s): Herbert Kai C., Shibata Kazuki, Asubar Joel T., Kuzuhara Masaaki

    DOI: 10.35848/1347-4065/ac0248

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  • Title: GaN-based MIS-HEMTs with Al2O3 dielectric deposited by low-cost and environmental-friendly mist-CVD technique
    Journal name: APPLIED PHYSICS EXPRESS  vol.14  (3)
    Date of publication: 2021.03
    Author(s): Low Rui Shan, Asubar Joel T., Baratov Ali, Kamiya Shunsuke, Nagase Itsuki, Urano Shun, Kawabata Shinsaku, Tokuda Hirokuni, Kuzuhara Masaaki, Nakamura Yusui, Naito Kenta, Motoyama Tomohiro, Yatabe Zenji

    DOI: 10.35848/1882-0786/abe19e

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  • Language: English
    Title: AlGaN/GaN high-electron-mobility transistor technology for high-voltage and low-on-resistance operation
    Journal name: Japanese Journal of Applied Physics  vol.55  (p.070101-1 - 070101-12)
    Date of publication: 2016.07
    Author(s): M. Kuzuhara, J. T. Asubar, and H. Tokuda

    DOI: 10.7567/JJAP.55.070101
    Type of publication: Research paper (scientific journal)
    Co-author classification: Multiple Authorship
    Field of experts:Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electron device and electronic equipment

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  • Language: English
    Title: Low-Loss and High-Voltage III-Nitride Transistors for Power Switching Applications
    Journal name: IEEE Transaction on Electron Devices  vol.62  (2)  (p.405 - 413)
    Date of publication: 2015.02
    Author(s): M. Kuzuhara and H. Tokuda

    DOI: 10.1109/TED.2014.2359055
    Type of publication: Research paper (scientific journal)
    Co-author classification: Multiple Authorship
    Field of experts:Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electron device and electronic equipment

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Books 【 display / non-display

  • Language: Japanese
    Title: 大橋弘通、葛原正明
    Publisher: 丸善株式会社
    Date of publication: 2011.01
    Author(s): 大橋 弘通,葛原正明 他

    Type of books: Scholarly book
    Authorship:Joint author
    Field of experts:Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electron device and electronic equipment

Works 【 display / non-display

  • Work title: MIS構造窒化物半導体トランジスタの低損失高耐圧化に関する研究, 基盤研究(C)(一般)
    Date:2014

  • Work title: 高温・高周波エレクトロニクスの基礎研究, 基盤研究(C)(一般)
    Date:2012

  • Work title: 固相C60及びグラフェンを用いた炭素系デバイスの基礎研究, 基盤研究(B)(一般)
    Date:2009

  • Work title: MOVPE成長InNの高品質化と電子輸送特性の解明, 基盤研究(C)一般
    Date:2007

  • Work title: PN接合GaN低リーク高耐圧ダイオードの研究, 基盤研究(C)一般
    Date:2006

Awards 【 display / non-display

  • Prize: IEEE Fellow
    Date awarded:2005.01
    Country:United States
    Award type:Award from international society, conference, symposium, etc.
    Awarding organization:IEEE
    Award-winner (group):Masaaki Kuzuhara
    Field of experts:Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electron device and electronic equipment

  • Prize: Fellow award by Japan Society of Applied Physics
    Date awarded:2013.09
    Country:Japan
    Award type:Honored in official journal of a scientific society, scientific journal
    Awarding organization:Japan Society of Applied Physics
    Award-winner (group):Masaaki Kuzuhara
    Field of experts:Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electron device and electronic equipment

  • Prize: Ichimura Award
    Date awarded:2002.04
    Country:Japan
    Award type:Award from publisher, newspaper, foundation, etc.
    Awarding organization:新技術開発財団
    Award-winner (group):Masaaki Kuzuhara, Naotaka Iwata, Tomohiro Itoh
    Field of experts:Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electron device and electronic equipment

Research Projects 【 display / non-display

  • Research category:Grant-in-Aid for Scientific Research(A)
    Project year:2019.04 - 2022.03
    Title:準ミリ波帯で動作する窒化物半導体トランジスタ増幅器の高耐圧・高出力化に関する研究
    Project summary:準ミリ波で動作するGaN-HEMTトランジスタの高性能化を推進し、小型軽量で高利得な高出力増幅器を開発する。また無線電力伝送への応用可能性を検討する。

  • Research category:Grant-in-Aid for Scientific Research(B)
    Project year:2016.04 - 2018.03
    Title:窒化物半導体トランジスタの横方向破壊電界強度の向上に関する研究
    Project summary:GaN基板上のHEMTの破壊電界限界を決める横方向破壊電界について実験検討を行った。

  • Project year:2014
    Title:MIS構造窒化物半導体トランジスタの低損失高耐圧化に関する研究
    Awarding organization:日本学術振興会
    System name:科学研究費助成事業(基盤研究(C)(一般))

  • Project year:2012
    Title:高温・高周波エレクトロニクスの基礎研究
    Awarding organization:日本学術振興会
    System name:科学研究費助成事業(基盤研究(C)(一般))

  • Project year:2011
    Title:高温・高周波エレクトロニクスの基礎研究
    Awarding organization:日本学術振興会
    System name:科学研究費助成事業(基盤研究(C)(一般))

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Committee Memberships 【 display / non-display

  • Organization name:応用物理学会
    Committee name:フェロー会員
    Date:2013

  • Organization name:IEEE
    Committee name:Fellow会員
    Date:2005