KUZUHARA MASAAKI
Graduating School 【 display / non-display 】
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Graduating School:Kyoto University
Faculty:Faculty of Engineering
Course / Major:Electrical Engineering
Kind of school:University
Date of graduation:1979.03
Completion status:Graduated
Country location code:Japan
Graduate School 【 display / non-display 】
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Graduate school:Kyoto University
Department:Graduate School, Division of Engineering
Course:Electrical Engineering
Course completed:Master's Course
Date of completion:1981.03
Completion status:Completed
Country:Japan
Studying abroad experiences 【 display / non-display 】
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Name of institution: University of Illinois
Name of job or career: Researcher
Date: 1987.08 - 1988.08
Degree 【 display / non-display 】
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Degree name:Doctor(Engineering)
Classified degree field:Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electron device and electronic equipment
Conferring institution:Kyoto University
Acquisition way:Thesis
Date of acquisition:1991.03
Career 【 display / non-display 】
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Affiliation:Fukui University
Department:工学部
Title:Professor
Date:2004.04 - 2020.03
Association Memberships 【 display / non-display 】
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Academic society name:IEEE
Academic country located:United States -
Academic society name:電子情報通信学会
Academic country located:Japan -
Academic society name:応用物理学会
Academic country located:Japan
Research Areas 【 display / non-display 】
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Research field:Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electron device and electronic equipment
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Research field:Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electron device and electronic equipment
Research Career 【 display / non-display 】
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Research subject: III-V Compound Semiconductor Devices
Periods of research: 2019.04 -
Keyword in research subject:Electron Devices
Field of experts:Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electron device and electronic equipment
Classification of research form:Collaboration in Japan
Research program:Grant-in-Aid for Scientific Research
Description of research activity:GaN-HEMTの高耐圧化と高周波化を進め、準ミリ波帯でワット級の高効率電力増幅器を実現する。
Papers 【 display / non-display 】
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Language: English
Title: Low thermal budget V/Al/Mo/Au ohmic contacts for improved performance of AlGaN/GaN MIS-HEMTs
Journal name: JAPANESE JOURNAL OF APPLIED PHYSICS vol.62 (11)
Date of publication: 2023.11
Author(s): Baratov Ali, Igarashi Takahiro, Ishiguro Masaki, Maeda Shogo, Terai Suguru, Kuzuhara Masaaki, Asubar JoelType of publication: Research paper (scientific journal)
Field of experts:Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electron device and electronic equipment -
Language: English
Title: MOVPE growth of AlGaN on RIE-treated GaN surfaces and its application to AlGaN/GaN electron devices
Journal name: 2023 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI, IMFEDK
Date of publication: 2023.11
Author(s): Yamamoto Akio, Baratov Ali, Asubar Joel T., Kuzuhara MasaakiDOI: 10.1109/IMFEDK60983.2023.10366345.
Type of publication: Research paper (international conference proceedings)
Co-author classification: Multiple Authorship
Field of experts:Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electron device and electronic equipment -
Language: English
Title: High performance normally-off recessed-gate GaN-based MIS-HEMTs achieved by oxygen plasma treatment
Journal name: 2023 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI, IMFEDK
Date of publication: 2023
Author(s): Ishiguro M., Terai S., Sekiyama K., Urano S., Baratov A., Asubar J. T., Kuzuhara M.Type of publication: Research paper (international conference proceedings)
Field of experts:Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electron device and electronic equipment -
Language: English
Title: AlGaN/GaN Schottky-Gate HEMTs with low thermal budget V/Al/Mo/Au ohmic contacts
Journal name: 2023 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI, IMFEDK
Date of publication: 2023
Author(s): Igarashi T., Maeda S., Baratov A., Asubar J. T., Kuzuhara M.Type of publication: Research paper (international conference proceedings)
Field of experts:Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electron device and electronic equipment -
Language: English
Title: Design of high-Al-content AlGaN/GaN HEMTs for improved DC and RF operation
Journal name: Dig., WOCSDICE – EXMATEC
Date of publication: 2023.05
Author(s): (1) K. Sakota , M. Fujikawa, Y. Shiraiwa, K. Kodama, J. T. Asubar, and M. KuzuharaType of publication: Research paper (international conference proceedings)
Field of experts:Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electron device and electronic equipment
Books 【 display / non-display 】
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Language: Japanese
Title: 大橋弘通、葛原正明
Publisher: 丸善株式会社
Date of publication: 2011.01
Author(s): 大橋 弘通,葛原正明 他
Type of books: Scholarly book
Authorship:Joint author
Field of experts:Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electron device and electronic equipment
Works 【 display / non-display 】
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Work title: MIS構造窒化物半導体トランジスタの低損失高耐圧化に関する研究, 基盤研究(C)(一般)
Date:2014 -
Work title: 高温・高周波エレクトロニクスの基礎研究, 基盤研究(C)(一般)
Date:2012 -
Work title: 固相C60及びグラフェンを用いた炭素系デバイスの基礎研究, 基盤研究(B)(一般)
Date:2009 -
Work title: MOVPE成長InNの高品質化と電子輸送特性の解明, 基盤研究(C)一般
Date:2007 -
Work title: PN接合GaN低リーク高耐圧ダイオードの研究, 基盤研究(C)一般
Date:2006
Awards 【 display / non-display 】
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Prize: IEEE Fellow
Date awarded:2005.01
Country:United States
Award type:Award from international society, conference, symposium, etc.
Awarding organization:IEEE
Award-winner (group):Masaaki Kuzuhara
Field of experts:Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electron device and electronic equipment -
Prize: Fellow award by Japan Society of Applied Physics
Date awarded:2013.09
Country:Japan
Award type:Honored in official journal of a scientific society, scientific journal
Awarding organization:Japan Society of Applied Physics
Award-winner (group):Masaaki Kuzuhara
Field of experts:Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electron device and electronic equipment -
Prize: Ichimura Award
Date awarded:2002.04
Country:Japan
Award type:Award from publisher, newspaper, foundation, etc.
Awarding organization:新技術開発財団
Award-winner (group):Masaaki Kuzuhara, Naotaka Iwata, Tomohiro Itoh
Field of experts:Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electron device and electronic equipment
Research Projects 【 display / non-display 】
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Research category:Grant-in-Aid for Scientific Research(A)
Project year:2019.04 - 2022.03
Title:準ミリ波帯で動作する窒化物半導体トランジスタ増幅器の高耐圧・高出力化に関する研究
Project summary:準ミリ波で動作するGaN-HEMTトランジスタの高性能化を推進し、小型軽量で高利得な高出力増幅器を開発する。また無線電力伝送への応用可能性を検討する。
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Research category:Grant-in-Aid for Scientific Research(B)
Project year:2016.04 - 2018.03
Title:窒化物半導体トランジスタの横方向破壊電界強度の向上に関する研究
Project summary:GaN基板上のHEMTの破壊電界限界を決める横方向破壊電界について実験検討を行った。
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Project year:2014
Title:MIS構造窒化物半導体トランジスタの低損失高耐圧化に関する研究
Awarding organization:日本学術振興会
System name:科学研究費助成事業(基盤研究(C)(一般))
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Project year:2012
Title:高温・高周波エレクトロニクスの基礎研究
Awarding organization:日本学術振興会
System name:科学研究費助成事業(基盤研究(C)(一般))
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Project year:2011
Title:高温・高周波エレクトロニクスの基礎研究
Awarding organization:日本学術振興会
System name:科学研究費助成事業(基盤研究(C)(一般))
Committee Memberships 【 display / non-display 】
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Organization name:応用物理学会
Committee name:フェロー会員
Date:2013 -
Organization name:応用物理学会
Committee name:編集委員
Date:2006 -
Organization name:IEEE
Committee name:Fellow会員
Date:2005 -
Organization name:応用物理学会
Committee name:編集委員
Date:2004