Personnel Information

写真b

KUZUHARA MASAAKI

Research Fields, Keywords
Electron Devices, III-Nitride Semiconductors, Device Simulation
SDGs Related Goals

Graduating School 【 display / non-display

  • Graduating School:Kyoto University
    Faculty:Faculty of Engineering
    Course / Major:Electrical Engineering

    Kind of school:University
    Date of graduation:1979.03
    Completion status:Graduated
    Country location code:JAPAN

Graduate School 【 display / non-display

  • Graduate school:Kyoto University
    Graduate course:Graduate School, Division of Engineering
    Major:Electrical Engineering

    Course completed:Master's Course
    Date of completion:1981.03
    Completion status:Completed
    Country location code:JAPAN

Studying abroad experiences 【 display / non-display

  • Name of institution: University of Illinois
    Name of job or career: Researcher
    Study abroad period: 1987.08 - 1988.08

Degree 【 display / non-display

  • Degree name:Doctor(Engineering)
    Classified degree field:Electron device/Electronic equipment
    Degree awarding institution:Kyoto University
    Acquisition way:Thesis
    Date of acquisition:1991.03

External Career 【 display / non-display

  • Name of affiliation:
    Career:Professor
    Periods of career:2004.04 - 2020.03

Field of expertise (Grants-in-aid for Scientific Research classification) 【 display / non-display

  • Field of expertise (Grants-in-aid for Scientific Research classification):Electron device/Electronic equipment

 

Research Career 【 display / non-display

  • Research subject: III-V Compound Semiconductor Devices

    Periods of research: 2019.04 -
    Keyword in research subject:Electron Devices
    Field of experts (Grants-in-aid for Scientific Research classification):Electron device/Electronic equipment
    Classification of research form:Collaboration in Japan
    Research program:Grant-in-Aid for Scientific Research

Papers 【 display / non-display

  • Written language: English
    Title of paper: AlGaN/GaN high-electron-mobility transistor technology for high-voltage and low-on-resistance operation
    Publication title: Japanese Journal of Applied Physics  vol.55  (p.070101-1 - 070101-12)
    Date of issue: 2016.07
    Name of author(s): M. Kuzuhara, J. T. Asubar, and H. Tokuda

    DOI: 10.7567/JJAP.55.070101
    Type of publication: Research paper (scientific journal)
    Co-author classification: Joint Work
    Field of experts (Grants-in-aid for Scientific Research classification):Electron device/Electronic equipment

  • Written language: English
    Title of paper: Low-Loss and High-Voltage III-Nitride Transistors for Power Switching Applications
    Publication title: IEEE Transaction on Electron Devices  vol.62  (2)  (p.405 - 413)
    Date of issue: 2015.02
    Name of author(s): M. Kuzuhara and H. Tokuda

    DOI: 10.1109/TED.2014.2359055
    Type of publication: Research paper (scientific journal)
    Co-author classification: Joint Work
    Field of experts (Grants-in-aid for Scientific Research classification):Electron device/Electronic equipment

Grant-in-Aid for Scientific Research 【 display / non-display

  • Research item:Grant-in-Aid for Scientific Research(A)
    Research activities period:2019.04 -