Graduating School 【 display / non-display 】

Graduating School 【 display / non-display 】

• Graduating School:Kyoto University
  Faculty:大学院工学研究科
  Course / Major:電子工学専攻
  

  Kind of school:University
  Date of graduation:2017.03
  Completion status:Graduated
  

• Graduating School:Kyoto University
  Faculty:Faculty of Engineering
  Course / Major:School of Electrical & Electronic Engineering
  

  Kind of school:University
  Date of graduation:2013.03
  Completion status:Graduated
  

Degree 【 display / non-display 】

Degree 【 display / non-display 】

• Degree name:博士（工学）
  Classified degree field:Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electric and electronic materials
  Conferring institution:Kyoto University
  Acquisition way:Coursework
  Date of acquisition:2017.03

Career 【 display / non-display 】

Career 【 display / non-display 】

• Affiliation:Kwansei Gakuin University
  Department:工学部 電気電子応用工学課程
  Title:Assistant Professor
  Date:2025.04 -

• Affiliation:Osaka University
  Department:大学院工学研究科 電気電子情報通信工学専攻
  Title:Assistant Professor
  Date:2020.10 - 2025.03

Research Areas 【 display / non-display 】

Research Areas 【 display / non-display 】

• Research field:Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electric and electronic materials
  

Papers 【 display / non-display 】

Papers 【 display / non-display 】

• Title: First-order SPICE modeling of SiC p- and n-channel side-gate JFETs toward high-temperature complementary JFET ICs
  Journal name: APL Electronic Devices  vol.1  (2)
  Date of publication: 2025.04
  Author(s): Noriyuki Maeda, Mitsuaki Kaneko, Hajime Tanaka, Tsunenobu Kimoto

  DOI: 10.1063/5.0254971
  Type of publication: Research paper (scientific journal)
  

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• Title: Analysis of trap-assisted tunneling current at non-alloyed contacts formed on heavily ion-implanted n-type SiC
  Journal name: Journal of Applied Physics  vol.137  (13)
  Date of publication: 2025.04
  Author(s): Masahiro Hara, Hajime Tanaka, Mitsuaki Kaneko, Tsunenobu Kimoto

  DOI: 10.1063/5.0258366
  Type of publication: Research paper (scientific journal)
  

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• Title: Free electron mobility limited by fixed charges and trapped electrons in 4H-SiC(11-20) and (1-100) MOSFETs annealed in NO
  Journal name: Japanese Journal of Applied Physics  vol.64  (1)  (p.010902)
  Date of publication: 2025.01
  Author(s): Koji Ito, Hajime Tanaka, Masahiro Horita, Jun Suda, Tsunenobu Kimoto

  DOI: 10.35848/1347-4065/ada1b7
  Type of publication: Research paper (scientific journal)
  

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• Title: Impact of interface structure on electronic states in 4H-SiC inversion layer
  Journal name: Japanese Journal of Applied Physics  vol.64  (1)
  Date of publication: 2025.01
  Author(s): Sachika Nagamizo, Hajime Tanaka, Nobuya Mori

  DOI: 10.35848/1347-4065/ad9a73
  Type of publication: Research paper (scientific journal)
  

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• Title: Influence of fixed charges and trapped electrons on free electron mobility at 4H-SiC(0001)/SiO₂ interfaces with gate oxides annealed in NO or POCl₃
  Journal name: Applied Physics Express  vol.17  (8)  (p.081003)
  Date of publication: 2024.08
  Author(s): Koji Ito, Hajime Tanaka, Masahiro Horita, Jun Suda, Tsunenobu Kimoto

  DOI: 10.35848/1882-0786/ad63ef
  Type of publication: Research paper (scientific journal)
  

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MISC 【 display / non-display 】

MISC 【 display / non-display 】

• Title:半導体ナノシートにおける表面ラフネス散乱で決まる平均自由行程の量子論に基づく数値解析手法
  Journal name:電子情報通信学会技術研究報告  vol.124  (145)  (p.21 - 24)
  Date of publication:2024.07
  Author(s):岡田 丈, 田中 一, 森 伸也

  Type of publication：Research paper, summary (national, other academic conference)
  

• Title:SISPAD 2023 レビュー
  Journal name:電子情報通信学会技術研究報告  vol.123  (250)  (p.1 - 6)
  Date of publication:2023.11
  Author(s):田中 一

  Type of publication：Meeting report
  

• Title:半導体ナノシートにおける表面ラフネス散乱の量子論に基づく数値解析
  Journal name:電子情報通信学会技術研究報告  vol.123  (250)  (p.10 - 15)
  Date of publication:2023.11
  Author(s):岡田 丈, 田中 一, 森 伸也

  Type of publication：Research paper, summary (national, other academic conference)
  

• Title:ファンデルワールスヘテロ構造におけるバンド間トンネルのNEGFシミュレーション
  Journal name:電子情報通信学会技術研究報告  vol.120  (239)  (p.52 - 57)
  Date of publication:2020.11
  Author(s):森 伸也, 橋本 風渡, 三島 嵩也, 田中 一

  Type of publication：Research paper, summary (national, other academic conference)
  

• Language：Japanese
  Title:Modeling of Electron Transport in 4H-SiC MOS Inversion Layers
  Publisher:電子情報通信学会
  Journal name:IEICE technical report  vol.118  (291)  (p.35 - 40)
  Date of publication:2018.11
  Author(s):田中 一, 森 伸也

  Type of publication：Research paper, summary (national, other academic conference)
  

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Awards 【 display / non-display 】

Awards 【 display / non-display 】

• Prize: Outstanding Reviewer Award
  Date awarded:2023.03
  Awarding organization：英国物理学会
  

• Prize: 論文奨励賞
  Date awarded:2023.03
  Awarding organization：応用物理学会
  

• Prize: 研究奨励賞
  Date awarded:2022.03
  Awarding organization：応用物理学会 シリコンテクノロジー分科会
  

• Prize: 研究奨励賞
  Date awarded:2016.11
  Awarding organization：応用物理学会 先進パワー半導体分科会 第3回講演会
  

• Prize: MFSK Award
  Date awarded:2015.12
  Awarding organization：IEEE EDS Kansai Chapter
  

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Presentations 【 display / non-display 】

Presentations 【 display / non-display 】

• Conference name:2024 International Conference on Silicon Carbide and Related Materials (ICSCRM 2024)
  Presentation date：2024.10.04
  Title:Monte Carlo analyses on impact ionization coefficients in 4H-SiC
  Presentation type:Oral presentation (invited, special)
  

• Conference name:シリコンテクノロジー分科会 第251回研究集会
  Presentation date：2024.07.11
  Title:SiCにおける反転層移動度および高電界輸送現象のシミュレーション
  Presentation type:Oral presentation (invited, special)
  

• Conference name:2024 International VLSI Symposium on Technology, Systems and Applications
  Presentation date：2024.04.23
  Title:Modeling and simulation of carrier transport properties in 4H-SiC
  Presentation type:Oral presentation (invited, special)
  

• Conference name:電子情報通信学会 シリコン材料・デバイス研究会
  Presentation date：2023.11.09
  Title:SISPAD 2023 レビュー
  Presentation type:Oral presentation (invited, special)
  

• Conference name:第70回 応用物理学会 春季学術講演会
  Presentation date：2023.03.16
  Title:SiC MOS反転層における電子散乱過程およびHall移動度のモデリング
  Presentation type:Oral presentation (invited, special)
  

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Teaching Experience (Off-campus) 【 display / non-display 】

Teaching Experience (Off-campus) 【 display / non-display 】

• Subject：電気電子ものづくり実験
  Institution name：

• Subject：電子情報工学創成実験
  Institution name：

• Subject：基礎化学実験
  Institution name：Osaka University

• Subject：電気電子工学専門実験B
  Institution name：

• Subject：コンピュータサイエンスとプログラミングI,II
  Institution name：

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Committee Memberships 【 display / non-display 】

Committee Memberships 【 display / non-display 】

• Organization name:応用物理学会 関西支部
  Committee name:幹事
  

• Organization name:2024 International Conference on Solid-State Devices and Materials (SSDM2024)
  Committee name:Steering Committee Member
  Date：2023.12 - 2024.11

• Organization name:International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) 2024
  Committee name:Program Committee Member
  Date：2023.12 - 2024.09

• Organization name:Asia-Pacific Workshop on Advanced Semiconductor Devices (AWAD)
  Committee name:Program Committee Member
  

• Organization name:International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) 2023
  Committee name:Program Vice Chair
  Date：2021.07 - 2023.10

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