Research History 【 display / non-display 】

Research History 【 display / non-display 】

• Affiliation:Kwansei Gakuin University
  Department:School of Science and Technology Department of Nanotechnology for Sustainable Energy
  Title:Professor
  Date:2015.04 -

• Affiliation:Kwansei Gakuin University
  Department:School of Science and Technology Department of Physics
  Title:Professor
  Date:2003.04 - 2015.03

• Affiliation:Kwansei Gakuin University
  Department:School of Science and Technology Department of Physics
  Title:Associate Professor (as old post name)
  Date:1997.04 - 2003.03

Research Areas 【 display / non-display 】

Research Areas 【 display / non-display 】

• Research field:Nanotechnology/Materials / Thin film/surface and interfacial physical properties

Papers 【 display / non-display 】

Papers 【 display / non-display 】

• Language: English
  Title: Investigation of Run-to-Run Fluctuation in Growth Conditions of Physical Vapor Transport Growth of 4H-SiC Crystals
  Journal name:  Materials Science Forum  vol.924  (p.19 - 22)
  Date of publication: 2018.06
  Author(s):  Nana Matsumoto, Hiroaki Shinya, Koji Ashida, Tadaaki Kaneko, Noboru Ohtani *, Masakazu Katsuno, Hiroshi Tsuge, Shinya Sato, Tatsuo Fujimoto

  DOI: 10.4028/www.scientific.net/MSF.924.19
  Type of publication: Research paper (scientific journal)
  Co-author classification: Multiple Authorship
  

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• Language: English
  Title: Rearrangement of Surface Structure of 4o Off-Axis 4H-SiC (0001) Epitaxial Wafer by High Temperature Annealing in Si/Ar Ambient
  Journal name:  Materials Science Forum  vol.924  (p.249 - 252)
  Date of publication: 2018.06
  Author(s): Koji Ashida, Daichi Dojima, Satoshi Torimi, Norihito Yabuki, Yusuke Sudo, Takuya Sakaguchi, Satoru Nogami, Makoto Kitabatake, Tadaaki Kaneko

  DOI: 10.4028/www.scientific.net/MSF.924.249
  Type of publication: Research paper (scientific journal)
  Co-author classification: Multiple Authorship
  

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• Language: English
  Title: In-situ growth mode control of AlN on SiC substrate by sublimation closed space technique
  Journal name:  Journal of Crystal Growth  vol.483  (p.206 - 210)
  Date of publication: 2018.02
  Author(s): Daichi Dojima, Koji Ashida, Tadaaki Kaneko

  DOI: 10.1016/j.jcrysgro.2017.11.032
  Type of publication: Research paper (scientific journal)
  Co-author classification: Single Author
  

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• Language: English
  Title: Low energy electron channeling contrast imaging from 4H-SiC surface by SEM and its comparison with CDIC-OM and PL imaging
  Journal name:  Materials Science Forum  vol.897  (p.193 - 196)
  Date of publication: 2017.05
  Author(s): Koji Ashida, Toru Aiso, Manabu Okamoto, Hirokazu Seki, Makoto Kitabatake, and Tadaaki Kaneko

  DOI: 10.4028/www.scientific.net/MSF.897.193
  Type of publication: Research paper (scientific journal)
  Co-author classification: Single Author
  

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• Language: English
  Title: Improving Mechanical Strength and Surface Uniformity to Prepare High Quality Thinned 4H-SiC Epitaxial Wafer Using Si-Vapor Etching Technology
  Journal name:  Materials Science Forum  vol.897  (p.375 - 378)
  Date of publication: 2017.05
  Author(s): Koji Ashida, Toru Aiso, Manabu Okamoto, Hirokazu Seki, Makoto Kitabatake, and Tadaaki Kaneko

  DOI: 10.4028/www.scientific.net/MSF.897.375
  Type of publication: Research paper (scientific journal)
  Co-author classification: Single Author
  

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Presentations 【 display / non-display 】

Presentations 【 display / non-display 】

• Language: Japanese
  Conference name: 先進パワー半導体分科会第6回講演会
  International/Domestic presentation: International presentation
  Holding date: 2019.12
  Title: 低加速SEMを用いた4H-SiC(0001)エピ/バルク界面ステップ形状の観察
  Presentation type: Poster presentation
  

• Language: Japanese
  Conference name: 先進パワー半導体分科会第6回講演会
  International/Domestic presentation: International presentation
  Holding date: 2019.12
  Title: 接合型ダイヤモンド単結晶基板の配向性
  Presentation type: Poster presentation
  

• Language: English
  Conference name: Atomic Level Characterization (ALC’19)
  International/Domestic presentation: International presentation
  Holding date: 2019.10
  Title: Characterization of subsurface damage of SiC substrate with several monolayers depth by the growth of epitaxial graphene
  Presentation type: Poster presentation
  

• Language: English
  Conference name: Atomic Level Characterization (ALC’19)
  International/Domestic presentation: International presentation
  Holding date: 2019.10
  Title: Characterization of step edge chemical characteristics of 4H-SiC (0001) by observing epitaxial graphene site-selective growth mode change
  Presentation type: Poster presentation
  

• Language: English
  Conference name: International Conference on Silicon Carbide and Related Materials 2019
  International/Domestic presentation: International presentation
  Holding date: 2019.09 - 2019.10
  Title: BPD-TED Conversion in the SiC substrate after High- Temperature Si-VE
  Presentation type: Oral presentation (general)
  

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