Personnel Information

写真b

KANEKO Tadaaki

Organization
School of Engineering Program of Electrical and Electronic Engineering Professor
Research Fields, Keywords
エッチング, ナノ表面制御, プロセスサイエンス, 次世代化合物半導体, 結晶成長, 超高温熱平衡エンジニアリング
Teaching and Research Fields
省エネルギー社会の実現に貢献する次世代半導体結晶材料。なかでも融点が高く、加工が困難な炭化ケイ素や窒化アルミニウムなどを対象に、結晶品質の向上と低コスト化を実現し得る新たな生産技術の確立を目的に、2000℃領域での結晶成長と熱エッチングを融合したナノ表面プロセスの開発を行っています。　　
Syllabus information URL
https://syllabus.kwansei.ac.jp/uniasv2/UnSSOLoginControlFree?REQ_ACTION_DO=/AGA030PLS01Action.do?REQ_FUNCTION_JUMP_START_FLG=1&SLB_LINK_DISP_FLG=729&TCH_NO=970070&REQ_PRFR_FUNC_ID=AGA030
SDGs Related Goals
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Degree 【 display / non-display 】

  • Degree name:工学博士
    Classified degree field:Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electric and electronic materials
    Conferring institution:Osaka University
    Acquisition way:Coursework
    Date of acquisition:1991.03

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Career 【 display / non-display 】

  • Affiliation:Kwansei Gakuin University
    Department:School of Engineering
    Title:Professor
    Date:2021.04 -

  • Affiliation:Kwansei Gakuin University
    Department:School of Science and Technology Department of Nanotechnology for Sustainable Energy
    Title:Professor
    Date:2015.04 - 2021.03

  • Affiliation:Kwansei Gakuin University
    Department:School of Science and Technology Department of Physics
    Title:Professor
    Date:2003.04 - 2015.03

  • Affiliation:Kwansei Gakuin University
    Department:School of Science and Technology Department of Physics
    Title:Associate Professor (as old post name)
    Date:1997.04 - 2003.03

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Association Memberships 【 display / non-display 】

  • Academic society name:日本応用物理学会
    Academic country located:Japan

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Research Areas 【 display / non-display 】

  • Research field:Nanotechnology/Materials / Thin film/surface and interfacial physical properties

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Papers 【 display / non-display 】

  • Language: Japanese
    Title: Investigation of Surface Changes during the SiC Thermal Decomposition Studied by Synchrotron Radiation X-ray Surface Diffraction
    Journal name: SPring-8/SACLA Research Report  vol.12  (4)  (p.165 - 169)
    Date of publication: 2024.08
    Author(s): Yoshida Masahiro, Ohwada Kenji, Kaneko Tadaaki, Kutsuma Yasunori, Dohjima Daichi, Aoyama Hiroshi, Mizuki Jun’ichiro

    DOI: 10.18957/rr.12.4.165

    　 Show links to external sites

  • Title: Non-Destructive Quantification of In-Plane Depth Distribution of Sub-Surface Damage on 4H-SiC Wafers Using Laser Light Scattering
    Journal name: Defect and Diffusion Forum  vol.434  (p.157 - 163)
    Date of publication: 2024.08
    Author(s): Daichi Dojima, Koki Shigematsu, Kaito Tayake, Kohei Toda and Tadaaki Kaneko

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  • Title: A Novel Contactless SiC Wafer Planarization Processing after Mechanical Slicing by Dynamic Thermal Annealing Processes
    Journal name: Materials Science Forum  vol.1124  (p.77 - 84)
    Date of publication: 2024.08
    Author(s): Kohei Toda, Daichi Kakutani, Daichi Dojima, Yuta Nakajima, Hiroshi Mihara, and Tadaaki Kaneko

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  • Title: Suppression of In-Grown SF Formation and BPD Propagation in 4H-Sic Epitaxial Layer by Sublimating Sub-Surface Damage before the Growth”
    Journal name: Solid State Phenomena  vol.344  (p.9 - 14)
    Date of publication: 2023.06
    Author(s): Kohei Toda, Daichi Dojima, Kiyoshi Kojima, Hiroshi Mihara, Shin-ichi Mitani, and Tadaaki Kaneko

    DOI: https://doi.org/10.4028/p-z108w8

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  • Title: 4H-SiC Full Wafer Mapping Image of CMP-Finished Sub-Surface Damage by Laser Light Scattering
    Journal name: Solid State Phenomena  vol.343  (p.43 - 50)
    Date of publication: 2023.05
    Author(s): Daichi Dojima, Daichi Dansako, Mizuho Maki, Kohei Toda, Tadaaki Kaneko

    DOI: https://doi.org/10.4028/p-1i3w12

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Industrial Property Rights 【 display / non-display 】

  • Property type:Patent
    Title:METHOD FOR SUPPRESSING FORMATION OF STACKING FAULT, STRUCTURE PRODUCED BY THIS METHOD, AND METHOD FOR EVALUATING AFFECTED LAYER
    Inventor(s)/Creator(s):KANEKO, Tadaaki、DOJIMA, Daichi、TODA, Kohei、SASAKI, Jun

    Application number:CN202280092520.2, 2024.08.23
    Publication number:CN118765340, 2024.10.11
    Country:China

  • Property type:Patent
    Title:METHOD FOR IMPROVIING DOPANT ACTIVATION RATE AND STRUCTURE CREATED BY MEANS OF SAID METHOD
    Inventor(s)/Creator(s):KANEKO, Tadaaki

    Application number:CN202280067421.9, 2024.04.03
    Publication number:CN118077034, 2024.05.24
    Country:China

  • Property type:Patent
    Title:METHOD FOR REDUCING STACKING FAULTS IN SILICON CARBIDE, AND STRUCTURE CREATED BY MEANS OF SAID METHOD
    Inventor(s)/Creator(s):KANEKO, Tadaaki

    Application number:CN202280067471.7, 2024.04.03
    Publication number:CN118077033, 2024.05.24
    Country:China

  • Property type:Patent
    Title:METHOD FOR REDUCING STACKING FAULTS IN SILICON CARBIDE, AND STRUCTURE CREATED BY MEANS OF SAID METHOD
    Inventor(s)/Creator(s):KANEKO, Tadaaki、DOJIMA, Daichi、TODA, Kohei、SASAKI, Jun

    Application number:EP22878363.5, 2024.03.28
    Publication number:EP4415026, 2024.08.14
    Country:Japan

  • Property type:Patent
    Title:METHOD FOR IMPROVIING DOPANT ACTIVATION RATE AND STRUCTURE CREATED BY MEANS OF SAID METHOD
    Inventor(s)/Creator(s):KANEKO Tadaaki

    Application number:EP22878362.7, 2024.03.27
    Publication number:EP4415025, 2024.08.14
    Country:Japan

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Research Projects 【 display / non-display 】

  • Project year：2015.09 - 2017.02
    Title:サブナノ結晶配向情報検出ウェハ表面マッピング装置の開発
    Awarding organization：独立行政法人新エネルギー・産業技術総合開発機構

  • Project year：2013.12 - 2016.03
    Title:超高真空、低温チップ増強ラマン分光イメージング装置の開発（研究成果展開事業　研究成果最適展開支援プログラムA-STEPシーズ育成タイプ）
    Awarding organization：独立行政法人科学技術振興機構

  • Project year：2013.01 - 2015.02
    Title:CMP-free 超高温安定化EPI-ready SiCナノ表面制御プロセスの開発（戦略的省エネルギー技術革新プログラム　実用化開発）
    Awarding organization：独立行政法人新エネルギー・産業技術総合開発機構

  • Project year：2006.07 - 2009.03
    Title:大面積SiC革新的基盤技術の研究開発（エネルギー使用合理化技術戦略的開発）
    Awarding organization：独立行政法人新エネルギー・産業技術総合開発機構

  • Project year：2002.07 - 2004.03
    Title:ＳｉＣパワーデバイス基板の研究開発（大学発事業創出実用化事業）
    Awarding organization：独立行政法人新エネルギー・産業技術総合開発機構

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Presentations 【 display / non-display 】

  • Conference name:パワーデバイス用シリコン および関連半導体材料に関する研究会 （第7回）
    Holding date：2021.06
    Title:低速電子線チャネリング効果を用いたSiC基板最表面層のSEM評価（Si蒸気圧エッチングを例にプロセス診断ツールとしての活用法）

  • Language:Japanese
    Conference name:先進パワー半導体分科会第6回講演会
    International/Domestic presentation:International presentation
    Holding date：2019.12
    Title:Direct observation of step structures at epitaxial/bulk interface of SiC using SEM
    Presentation type:Poster presentation

  • Language:Japanese
    Conference name:先進パワー半導体分科会第6回講演会
    International/Domestic presentation:International presentation
    Holding date：2019.12
    Title:Crystalline orientation of diamond mosaic wafer
    Presentation type:Poster presentation

  • Language:English
    Conference name:Atomic Level Characterization (ALC’19)
    International/Domestic presentation:International presentation
    Holding date：2019.10
    Title:Characterization of subsurface damage of SiC substrate with several monolayers depth by the growth of epitaxial graphene
    Presentation type:Poster presentation

  • Language:English
    Conference name:Atomic Level Characterization (ALC’19)
    International/Domestic presentation:International presentation
    Holding date：2019.10
    Title:Characterization of step edge chemical characteristics of 4H-SiC (0001) by observing epitaxial graphene site-selective growth mode change
    Presentation type:Poster presentation

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