KANEKO Tadaaki




Research History 【 display / non-display 】
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Affiliation:Kwansei Gakuin University
Department:School of Science and Technology Department of Nanotechnology for Sustainable Energy
Title:Professor
Date:2015.04 - -
Affiliation:Kwansei Gakuin University
Department:School of Science and Technology Department of Physics
Title:Professor
Date:2003.04 - 2015.03 -
Affiliation:Kwansei Gakuin University
Department:School of Science and Technology Department of Physics
Title:Associate Professor (as old post name)
Date:1997.04 - 2003.03
Research Areas 【 display / non-display 】
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Research field:Nanotechnology/Materials / Thin film/surface and interfacial physical properties
Papers 【 display / non-display 】
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Language: English
Title: Investigation of Run-to-Run Fluctuation in Growth Conditions of Physical Vapor Transport Growth of 4H-SiC Crystals
Journal name: Materials Science Forum vol.924 (p.19 - 22)
Date of publication: 2018.06
Author(s): Nana Matsumoto, Hiroaki Shinya, Koji Ashida, Tadaaki Kaneko, Noboru Ohtani *, Masakazu Katsuno, Hiroshi Tsuge, Shinya Sato, Tatsuo FujimotoDOI: 10.4028/www.scientific.net/MSF.924.19
Type of publication: Research paper (scientific journal)
Co-author classification: Multiple Authorship
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Language: English
Title: Rearrangement of Surface Structure of 4o Off-Axis 4H-SiC (0001) Epitaxial Wafer by High Temperature Annealing in Si/Ar Ambient
Journal name: Materials Science Forum vol.924 (p.249 - 252)
Date of publication: 2018.06
Author(s): Koji Ashida, Daichi Dojima, Satoshi Torimi, Norihito Yabuki, Yusuke Sudo, Takuya Sakaguchi, Satoru Nogami, Makoto Kitabatake, Tadaaki KanekoDOI: 10.4028/www.scientific.net/MSF.924.249
Type of publication: Research paper (scientific journal)
Co-author classification: Multiple Authorship
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Language: English
Title: In-situ growth mode control of AlN on SiC substrate by sublimation closed space technique
Journal name: Journal of Crystal Growth vol.483 (p.206 - 210)
Date of publication: 2018.02
Author(s): Daichi Dojima, Koji Ashida, Tadaaki KanekoDOI: 10.1016/j.jcrysgro.2017.11.032
Type of publication: Research paper (scientific journal)
Co-author classification: Single Author
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Language: English
Title: Low energy electron channeling contrast imaging from 4H-SiC surface by SEM and its comparison with CDIC-OM and PL imaging
Journal name: Materials Science Forum vol.897 (p.193 - 196)
Date of publication: 2017.05
Author(s): Koji Ashida, Toru Aiso, Manabu Okamoto, Hirokazu Seki, Makoto Kitabatake, and Tadaaki KanekoDOI: 10.4028/www.scientific.net/MSF.897.193
Type of publication: Research paper (scientific journal)
Co-author classification: Single Author
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Language: English
Title: Improving Mechanical Strength and Surface Uniformity to Prepare High Quality Thinned 4H-SiC Epitaxial Wafer Using Si-Vapor Etching Technology
Journal name: Materials Science Forum vol.897 (p.375 - 378)
Date of publication: 2017.05
Author(s): Koji Ashida, Toru Aiso, Manabu Okamoto, Hirokazu Seki, Makoto Kitabatake, and Tadaaki KanekoDOI: 10.4028/www.scientific.net/MSF.897.375
Type of publication: Research paper (scientific journal)
Co-author classification: Single Author
Presentations 【 display / non-display 】
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Language: Japanese
Conference name: 先進パワー半導体分科会第6回講演会
International/Domestic presentation: International presentation
Holding date: 2019.12
Title: 低加速SEMを用いた4H-SiC(0001)エピ/バルク界面ステップ形状の観察
Presentation type: Poster presentation
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Language: Japanese
Conference name: 先進パワー半導体分科会第6回講演会
International/Domestic presentation: International presentation
Holding date: 2019.12
Title: 接合型ダイヤモンド単結晶基板の配向性
Presentation type: Poster presentation
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Language: English
Conference name: Atomic Level Characterization (ALC’19)
International/Domestic presentation: International presentation
Holding date: 2019.10
Title: Characterization of subsurface damage of SiC substrate with several monolayers depth by the growth of epitaxial graphene
Presentation type: Poster presentation
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Language: English
Conference name: Atomic Level Characterization (ALC’19)
International/Domestic presentation: International presentation
Holding date: 2019.10
Title: Characterization of step edge chemical characteristics of 4H-SiC (0001) by observing epitaxial graphene site-selective growth mode change
Presentation type: Poster presentation
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Language: English
Conference name: International Conference on Silicon Carbide and Related Materials 2019
International/Domestic presentation: International presentation
Holding date: 2019.09 - 2019.10
Title: BPD-TED Conversion in the SiC substrate after High- Temperature Si-VE
Presentation type: Oral presentation (general)