Personnel Information

写真b

KANEKO Tadaaki

Organization
School of Engineering Program of Electrical and Electronic Engineering
Research Fields, Keywords
次世代化合物半導体, 超高温熱平衡エンジニアリング, 結晶成長, エッチング, プロセスサイエンス, ナノ表面制御
SDGs Related Goals

Research History 【 display / non-display

  • Affiliation:Kwansei Gakuin University
    Department:School of Science and Technology Department of Nanotechnology for Sustainable Energy
    Title:Professor
    Date:2015.04 -

  • Affiliation:Kwansei Gakuin University
    Department:School of Science and Technology Department of Physics
    Title:Professor
    Date:2003.04 - 2015.03

  • Affiliation:Kwansei Gakuin University
    Department:School of Science and Technology Department of Physics
    Title:Associate Professor (as old post name)
    Date:1997.04 - 2003.03

Research Areas 【 display / non-display

  • Research field:Nanotechnology/Materials / Thin film/surface and interfacial physical properties

Papers 【 display / non-display

  • Language: English
    Title: Investigation of Run-to-Run Fluctuation in Growth Conditions of Physical Vapor Transport Growth of 4H-SiC Crystals
    Journal name:  Materials Science Forum  vol.924  (p.19 - 22)
    Date of publication: 2018.06
    Author(s):  Nana Matsumoto, Hiroaki Shinya, Koji Ashida, Tadaaki Kaneko, Noboru Ohtani *, Masakazu Katsuno, Hiroshi Tsuge, Shinya Sato, Tatsuo Fujimoto

    DOI: 10.4028/www.scientific.net/MSF.924.19
    Type of publication: Research paper (scientific journal)
    Co-author classification: Multiple Authorship

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  • Language: English
    Title: Rearrangement of Surface Structure of 4o Off-Axis 4H-SiC (0001) Epitaxial Wafer by High Temperature Annealing in Si/Ar Ambient
    Journal name:  Materials Science Forum  vol.924  (p.249 - 252)
    Date of publication: 2018.06
    Author(s): Koji Ashida, Daichi Dojima, Satoshi Torimi, Norihito Yabuki, Yusuke Sudo, Takuya Sakaguchi, Satoru Nogami, Makoto Kitabatake, Tadaaki Kaneko

    DOI: 10.4028/www.scientific.net/MSF.924.249
    Type of publication: Research paper (scientific journal)
    Co-author classification: Multiple Authorship

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  • Language: English
    Title: In-situ growth mode control of AlN on SiC substrate by sublimation closed space technique
    Journal name:  Journal of Crystal Growth  vol.483  (p.206 - 210)
    Date of publication: 2018.02
    Author(s): Daichi Dojima, Koji Ashida, Tadaaki Kaneko

    DOI: 10.1016/j.jcrysgro.2017.11.032
    Type of publication: Research paper (scientific journal)
    Co-author classification: Single Author

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  • Language: English
    Title: Low energy electron channeling contrast imaging from 4H-SiC surface by SEM and its comparison with CDIC-OM and PL imaging
    Journal name:  Materials Science Forum  vol.897  (p.193 - 196)
    Date of publication: 2017.05
    Author(s): Koji Ashida, Toru Aiso, Manabu Okamoto, Hirokazu Seki, Makoto Kitabatake, and Tadaaki Kaneko

    DOI: 10.4028/www.scientific.net/MSF.897.193
    Type of publication: Research paper (scientific journal)
    Co-author classification: Single Author

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  • Language: English
    Title: Improving Mechanical Strength and Surface Uniformity to Prepare High Quality Thinned 4H-SiC Epitaxial Wafer Using Si-Vapor Etching Technology
    Journal name:  Materials Science Forum  vol.897  (p.375 - 378)
    Date of publication: 2017.05
    Author(s): Koji Ashida, Toru Aiso, Manabu Okamoto, Hirokazu Seki, Makoto Kitabatake, and Tadaaki Kaneko

    DOI: 10.4028/www.scientific.net/MSF.897.375
    Type of publication: Research paper (scientific journal)
    Co-author classification: Single Author

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Presentations 【 display / non-display

  • Language: Japanese
    Conference name: 先進パワー半導体分科会第6回講演会
    International/Domestic presentation: International presentation
    Holding date: 2019.12
    Title: 低加速SEMを用いた4H-SiC(0001)エピ/バルク界面ステップ形状の観察
    Presentation type: Poster presentation

  • Language: Japanese
    Conference name: 先進パワー半導体分科会第6回講演会
    International/Domestic presentation: International presentation
    Holding date: 2019.12
    Title: 接合型ダイヤモンド単結晶基板の配向性
    Presentation type: Poster presentation

  • Language: English
    Conference name: Atomic Level Characterization (ALC’19)
    International/Domestic presentation: International presentation
    Holding date: 2019.10
    Title: Characterization of subsurface damage of SiC substrate with several monolayers depth by the growth of epitaxial graphene
    Presentation type: Poster presentation

  • Language: English
    Conference name: Atomic Level Characterization (ALC’19)
    International/Domestic presentation: International presentation
    Holding date: 2019.10
    Title: Characterization of step edge chemical characteristics of 4H-SiC (0001) by observing epitaxial graphene site-selective growth mode change
    Presentation type: Poster presentation

  • Language: English
    Conference name: International Conference on Silicon Carbide and Related Materials 2019
    International/Domestic presentation: International presentation
    Holding date: 2019.09 - 2019.10
    Title: BPD-TED Conversion in the SiC substrate after High- Temperature Si-VE
    Presentation type: Oral presentation (general)

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