Campus Career 【 display / non-display 】

  • Job function organization:Kwansei Gakuin University School of Science and Technology Department of Physics
    Career:Associate Professor (as old post name)
    Duties period:1997.04 - 2003.03

  • Job function organization:Kwansei Gakuin University School of Science and Technology Department of Physics
    Career:Professor
    Duties period:2003.04 - 2015.03

  • Job function organization:Kwansei Gakuin University School of Science and Technology Department of Nanotechnology for Sustainable Energy
    Career:Professor
    Duties period:2015.04 -

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Field of expertise (Grants-in-aid for Scientific Research classification) 【 display / non-display 】

  • Field of expertise (Grants-in-aid for Scientific Research classification):Thin film/Surface and interfacial physical properties

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Papers 【 display / non-display 】

  • Written language: English
    Title of paper: Investigation of Run-to-Run Fluctuation in Growth Conditions of Physical Vapor Transport Growth of 4H-SiC Crystals
    Publication title:  Materials Science Forum  vol.924  (p.19 - 22)
    Date of issue: 2018.06
    Name of author(s):  Nana Matsumoto, Hiroaki Shinya, Koji Ashida, Tadaaki Kaneko, Noboru Ohtani *, Masakazu Katsuno, Hiroshi Tsuge, Shinya Sato, Tatsuo Fujimoto

    DOI: 10.4028/www.scientific.net/MSF.924.19
    Type of publication: Research paper (scientific journal)
    Co-author classification: Joint Work

  • Written language: English
    Title of paper: Rearrangement of Surface Structure of 4o Off-Axis 4H-SiC (0001) Epitaxial Wafer by High Temperature Annealing in Si/Ar Ambient
    Publication title:  Materials Science Forum  vol.924  (p.249 - 252)
    Date of issue: 2018.06
    Name of author(s): Koji Ashida, Daichi Dojima, Satoshi Torimi, Norihito Yabuki, Yusuke Sudo, Takuya Sakaguchi, Satoru Nogami, Makoto Kitabatake, Tadaaki Kaneko

    DOI: 10.4028/www.scientific.net/MSF.924.249
    Type of publication: Research paper (scientific journal)
    Co-author classification: Joint Work

  • Written language: English
    Title of paper: In-situ growth mode control of AlN on SiC substrate by sublimation closed space technique
    Publication title:  Journal of Crystal Growth  vol.483  (p.206 - 210)
    Date of issue: 2018.02
    Name of author(s): Daichi Dojima, Koji Ashida, Tadaaki Kaneko

    DOI: 10.1016/j.jcrysgro.2017.11.032
    Type of publication: Research paper (scientific journal)
    Co-author classification: Single Work

  • Written language: English
    Title of paper: Low energy electron channeling contrast imaging from 4H-SiC surface by SEM and its comparison with CDIC-OM and PL imaging
    Publication title:  Materials Science Forum  vol.897  (p.193 - 196)
    Date of issue: 2017.05
    Name of author(s): Koji Ashida, Toru Aiso, Manabu Okamoto, Hirokazu Seki, Makoto Kitabatake, and Tadaaki Kaneko

    DOI: 10.4028/www.scientific.net/MSF.897.193
    Type of publication: Research paper (scientific journal)
    Co-author classification: Single Work

  • Written language: English
    Title of paper: Improving Mechanical Strength and Surface Uniformity to Prepare High Quality Thinned 4H-SiC Epitaxial Wafer Using Si-Vapor Etching Technology
    Publication title:  Materials Science Forum  vol.897  (p.375 - 378)
    Date of issue: 2017.05
    Name of author(s): Koji Ashida, Toru Aiso, Manabu Okamoto, Hirokazu Seki, Makoto Kitabatake, and Tadaaki Kaneko

    DOI: 10.4028/www.scientific.net/MSF.897.375
    Type of publication: Research paper (scientific journal)
    Co-author classification: Single Work

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Presentations 【 display / non-display 】

  • Presentation (Written) language: English
    Conference Name: Atomic Level Characterization (ALC’19)
    Conference classification: International conference
    Meeting period: 2019.10
    Topic / Session title: Characterization of subsurface damage of SiC substrate with several monolayers depth by the growth of epitaxial graphene
    Form of presentation: Poster (general)

  • Presentation (Written) language: English
    Conference Name: Atomic Level Characterization (ALC’19)
    Conference classification: International conference
    Meeting period: 2019.10
    Topic / Session title: Characterization of step edge chemical characteristics of 4H-SiC (0001) by observing epitaxial graphene site-selective growth mode change
    Form of presentation: Poster (general)

  • Presentation (Written) language: English
    Conference Name: International Conference on Silicon Carbide and Related Materials 2019
    Conference classification: International conference
    Meeting period: 2019.09 - 2019.10
    Topic / Session title: BPD-TED Conversion in the SiC substrate after High- Temperature Si-VE
    Form of presentation: Oral Presentation(general)

  • Presentation (Written) language: English
    Conference Name: 26th Assembly of Advanced Materials Congress (AMC)
    Conference classification: International conference
    Meeting period: 2019.06
    Topic / Session title: Precise control of 4H-SiC (0001) step edges for the growth of zero-layer epitaxial graphene
    Form of presentation: Oral Presentation(general)

  • Presentation (Written) language: English
    Conference Name: International Symposium on Epitaxial Graphene 2017(ISEG 2017)
    Conference classification: International conference
    Meeting period: 2017.11
    Topic / Session title: Precise control of chemical characteristics of 4H-SiC(0001) step edges for kinetically sublimated step flow graphene growth
    Form of presentation: Oral Presentation(general)

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