Personnel Information

写真b

KANEKO Tadaaki

Organization
School of Engineering Program of Electrical and Electronic Engineering
Research Fields, Keywords
次世代化合物半導体, 超高温熱平衡エンジニアリング, 結晶成長, エッチング, プロセスサイエンス, ナノ表面制御
Teaching and Research Fields
省エネルギー社会の実現に貢献する次世代半導体結晶材料。なかでも融点が高く、加工が困難な炭化ケイ素や窒化アルミニウムなどを対象に、結晶品質の向上と低コスト化を実現し得る新たな生産技術の確立を目的に、2000℃領域での結晶成長と熱エッチングを融合したナノ表面プロセスの開発を行っています。  
SDGs Related Goals

Degree 【 display / non-display

  • Degree name:工学博士
    Classified degree field:Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electric and electronic materials
    Conferring institution:Osaka University
    Acquisition way:Coursework
    Date of acquisition:1991.03

Career 【 display / non-display

  • Affiliation:Kwansei Gakuin University
    Department:School of Science and Technology Department of Nanotechnology for Sustainable Energy
    Title:Professor
    Date:2015.04 -

  • Affiliation:Kwansei Gakuin University
    Department:School of Science and Technology Department of Physics
    Title:Professor
    Date:2003.04 - 2015.03

  • Affiliation:Kwansei Gakuin University
    Department:School of Science and Technology Department of Physics
    Title:Associate Professor (as old post name)
    Date:1997.04 - 2003.03

Association Memberships 【 display / non-display

  • Academic society name:日本応用物理学会
    Academic country located:Japan

Research Areas 【 display / non-display

  • Research field:Nanotechnology/Materials / Thin film/surface and interfacial physical properties

Papers 【 display / non-display

  • Title: X-ray two-beam topography for quantitative derivation of phase shift by crystalline dislocations
    Journal name: PHYSICAL REVIEW RESEARCH  vol.5  (1)
    Date of publication: 2023.03
    Author(s): Kohmura Yoshiki, Ohwada Kenji, Kakiuchi Nobuki, Sawada Kei, Kaneko Tadaaki, Mizuki Jun'ichiro, Mizumaki Masaichiro, Watanuki Tetsu, Ishikawa Tetsuya

    DOI: 10.1103/PhysRevResearch.5.L012043

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  • Language: English
    Title: Investigation of Run-to-Run Fluctuation in Growth Conditions of Physical Vapor Transport Growth of 4H-SiC Crystals
    Journal name:  Materials Science Forum  vol.924  (p.19 - 22)
    Date of publication: 2018.06
    Author(s):  Nana Matsumoto, Hiroaki Shinya, Koji Ashida, Tadaaki Kaneko, Noboru Ohtani *, Masakazu Katsuno, Hiroshi Tsuge, Shinya Sato, Tatsuo Fujimoto

    DOI: 10.4028/www.scientific.net/MSF.924.19
    Type of publication: Research paper (scientific journal)
    Co-author classification: Multiple Authorship

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  • Language: English
    Title: Rearrangement of Surface Structure of 4o Off-Axis 4H-SiC (0001) Epitaxial Wafer by High Temperature Annealing in Si/Ar Ambient
    Journal name:  Materials Science Forum  vol.924  (p.249 - 252)
    Date of publication: 2018.06
    Author(s): Koji Ashida, Daichi Dojima, Satoshi Torimi, Norihito Yabuki, Yusuke Sudo, Takuya Sakaguchi, Satoru Nogami, Makoto Kitabatake, Tadaaki Kaneko

    DOI: 10.4028/www.scientific.net/MSF.924.249
    Type of publication: Research paper (scientific journal)
    Co-author classification: Multiple Authorship

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  • Language: English
    Title: In-situ growth mode control of AlN on SiC substrate by sublimation closed space technique
    Journal name:  Journal of Crystal Growth  vol.483  (p.206 - 210)
    Date of publication: 2018.02
    Author(s): Daichi Dojima, Koji Ashida, Tadaaki Kaneko

    DOI: 10.1016/j.jcrysgro.2017.11.032
    Type of publication: Research paper (scientific journal)
    Co-author classification: Single Author

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  • Language: English
    Title: Low energy electron channeling contrast imaging from 4H-SiC surface by SEM and its comparison with CDIC-OM and PL imaging
    Journal name:  Materials Science Forum  vol.897  (p.193 - 196)
    Date of publication: 2017.05
    Author(s): Koji Ashida, Toru Aiso, Manabu Okamoto, Hirokazu Seki, Makoto Kitabatake, and Tadaaki Kaneko

    DOI: 10.4028/www.scientific.net/MSF.897.193
    Type of publication: Research paper (scientific journal)
    Co-author classification: Single Author

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Industrial Property Rights 【 display / non-display

  • Property type:Patent
    Title:METHOD FOR EVALUATING WORK-MODIFIED LAYER, AND METHOD OF MANUFACTURING SEMICONDUCTOR SINGLE CRYSTAL SUBSTRATE
    Inventor(s)/Creator(s):KANEKO Tadaaki

    Application number:CN202280009850.0, 2023.07.12
    Publication number:CN116762157, 2023.09.15
    Country:China

  • Property type:Patent
    Title:METHOD FOR MEASURING ETCHING AMOUNT, AND MEASUREMENT SYSTEM THEREFOR
    Inventor(s)/Creator(s):KANEKO Tadaaki

    Application number:CN202280008934.2, 2023.07.03
    Publication number:CN116745471, 2023.09.12
    Country:China

  • Property type:Patent
    Title:HEAT TREATMENT ENVIRONMENT EVALUATION METHOD AND SILICON CARBIDE SUBSTRATE
    Inventor(s)/Creator(s):KANEKO Tadaaki , DOJIMA Daichi

    Application number:CN202180070316.6, 2023.04.13
    Publication number:CN116348640, 2023.06.27
    Country:China

  • Property type:Patent
    Title:EVALUATION METHOD FOR SILICON CARBIDE SUBSTRATES
    Inventor(s)/Creator(s):KANEKO Tadaaki , DOJIMA Daichi

    Application number:CN202180069677.9, 2023.04.11
    Publication number:CN116391064, 2023.07.04
    Country:China

  • Property type:Patent
    Title:EVALUATION METHOD FOR SILICON CARBIDE SUBSTRATES
    Inventor(s)/Creator(s):KANEKO Tadaaki , DOJIMA Daichi

    Application number:EP21886282.9, 2023.03.28
    Publication number:EP4239111, 2023.09.06
    Country:Japan

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Research Projects 【 display / non-display

  • Project year:2015.09 - 2017.02
    Title:サブナノ結晶配向情報検出ウェハ表面マッピング装置の開発
    Awarding organization:独立行政法人新エネルギー・産業技術総合開発機構

  • Project year:2013.12 - 2016.03
    Title:超高真空、低温チップ増強ラマン分光イメージング装置の開発(研究成果展開事業 研究成果最適展開支援プログラムA-STEPシーズ育成タイプ)
    Awarding organization:独立行政法人科学技術振興機構

  • Project year:2013.01 - 2015.02
    Title:CMP-free 超高温安定化EPI-ready SiCナノ表面制御プロセスの開発(戦略的省エネルギー技術革新プログラム 実用化開発)
    Awarding organization:独立行政法人新エネルギー・産業技術総合開発機構

  • Project year:2006.07 - 2009.03
    Title:大面積SiC革新的基盤技術の研究開発(エネルギー使用合理化技術戦略的開発)
    Awarding organization:独立行政法人新エネルギー・産業技術総合開発機構

  • Project year:2002.07 - 2004.03
    Title:SiCパワーデバイス基板の研究開発(大学発事業創出実用化事業)
    Awarding organization:独立行政法人新エネルギー・産業技術総合開発機構

Presentations 【 display / non-display

  • Language:Japanese
    Conference name:先進パワー半導体分科会第6回講演会
    International/Domestic presentation:International presentation
    Holding date:2019.12
    Title:Direct observation of step structures at epitaxial/bulk interface of SiC using SEM
    Presentation type:Poster presentation

  • Language:Japanese
    Conference name:先進パワー半導体分科会第6回講演会
    International/Domestic presentation:International presentation
    Holding date:2019.12
    Title:Crystalline orientation of diamond mosaic wafer
    Presentation type:Poster presentation

  • Language:English
    Conference name:Atomic Level Characterization (ALC’19)
    International/Domestic presentation:International presentation
    Holding date:2019.10
    Title:Characterization of subsurface damage of SiC substrate with several monolayers depth by the growth of epitaxial graphene
    Presentation type:Poster presentation

  • Language:English
    Conference name:Atomic Level Characterization (ALC’19)
    International/Domestic presentation:International presentation
    Holding date:2019.10
    Title:Characterization of step edge chemical characteristics of 4H-SiC (0001) by observing epitaxial graphene site-selective growth mode change
    Presentation type:Poster presentation

  • Language:English
    Conference name:International Conference on Silicon Carbide and Related Materials 2019
    International/Domestic presentation:International presentation
    Holding date:2019.09 - 2019.10
    Title:BPD-TED Conversion in the SiC substrate after High- Temperature Si-VE
    Presentation type:Oral presentation (general)

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