Personnel Information

写真b

OHTANI Noboru

Organization
School of Engineering Program of Electrical and Electronic Engineering Professor
Research Fields, Keywords
半導体材料, 欠陥物理, 結晶成長
Teaching and Research Fields
SiC単結晶の結晶成長並びに結晶欠陥の研究。
Syllabus information URL
https://syllabus.kwansei.ac.jp/uniasv2/UnSSOLoginControlFree?REQ_ACTION_DO=/AGA030PLS01Action.do?REQ_FUNCTION_JUMP_START_FLG=1&SLB_LINK_DISP_FLG=275&TCH_NO=110010&REQ_PRFR_FUNC_ID=AGA030
SDGs Related Goals
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Degree 【 display / non-display 】

  • Degree name:Doctor of Philosophy
    Classified degree field:Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electric and electronic materials
    Acquisition way:Coursework
    Date of acquisition:1993.07

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Career 【 display / non-display 】

  • Affiliation:Kwansei Gakuin University
    Department:School of Science and Technology Department of Nanotechnology for Sustainable Energy
    Title:Professor
    Date:2015.04 -

  • Affiliation:Kwansei Gakuin University
    Department:School of Science and Technology Department of Physics
    Title:Professor
    Date:2011.04 - 2015.03

  • Affiliation:Kwansei Gakuin University
    Department:Department reports to President
    Title:Professor
    Date:2008.04 - 2011.03

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Association Memberships 【 display / non-display 】

  • Academic society name:日本結晶成長学会
    Academic country located:Japan

  • Academic society name:応用物理学会
    Academic country located:Japan

  • Academic society name:日本物理学会
    Academic country located:Japan

  • Academic society name:The Electrochemical Society
    Academic country located:United States

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Research Areas 【 display / non-display 】

  • Research field:Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electric and electronic materials

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Papers 【 display / non-display 】

  • Title: Analysis of diamond dislocations by Raman polarization measurement
    Journal name: DIAMOND AND RELATED MATERIALS  vol.140
    Date of publication: 2023.12
    Author(s): Takeuchi Marika, Yasuoka Mikitaka, Ishii Marino, Ohtani Noboru, Shikata Shinichi

    DOI: 10.1016/j.diamond.2023.110510

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  • Title: Influence of substrate sapphire orientation on direct CVD growth of graphene
    Journal name: JAPANESE JOURNAL OF APPLIED PHYSICS  vol.62  (8)
    Date of publication: 2023.08
    Author(s): Kawai Yoshikazu, Nakao Takuto, Oda Takato, Ohtani Noboru, Hibino Hiroki

    DOI: 10.35848/1347-4065/acea0b

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  • Title: Experimental and simulation studies of surface segregation-limited nitrogen incorporation at the growth front of physical vapor transport-grown 4H-SiC crystals
    Journal name: JOURNAL OF APPLIED PHYSICS  vol.134  (4)
    Date of publication: 2023.07
    Author(s): Ota Takuto, Asano Shunsuke, Inoue Yuta, Ohtani Noboru

    DOI: 10.1063/5.0156457

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  • Title: Seed surface orientation dependence of the defect formation at the initial stage of physical vapor transport growth of 4H-SiC crystals
    Journal name: JOURNAL OF CRYSTAL GROWTH  vol.597
    Date of publication: 2022.11
    Author(s): Yodo Mikako, Nakai Asahi, Tamura Shungo, Ohtani Noboru

    DOI: 10.1016/j.jcrysgro.2022.126856

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  • Title: Effect of surface irregularities on diamond Schottky barrier diode with threading dislocations (vol 127, 109188, 2022)
    Journal name: DIAMOND AND RELATED MATERIALS  vol.128
    Date of publication: 2022.10
    Author(s): Mikata N., Takeuchi M., Ohtani N., Ichikawa K., Teraji T., Shikata S.

    DOI: 10.1016/j.diamond.2022.109262

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Books 【 display / non-display 】

  • Language: Japanese
    Title: OHM大学テキスト 固体物性工学
    Publisher: オーム社
    Date of publication: 2012.10
    Author(s): 大谷 昇

    Type of books: Scholarly book
    Authorship：Joint author

  • Language: Japanese
    Title: 半導体SiC 技術と応用 第2版
    Publisher: 日刊工業新聞社
    Date of publication: 2011.09
    Author(s): 松波弘之、大谷昇、木本恒暢、中村孝

    Type of books: Scholarly book
    Authorship：Joint author

  • Language: Japanese
    Title: 『次世代パワー半導体－省エネルギー社会に向けたデバイス開発の最前線－』第1章、第1編、第1節
    Publisher: 株式会社エヌ・ティー・エス
    Date of publication: 2009.10
    Author(s): 大谷 昇

    Type of books: Scholarly book
    Authorship：Joint author

  • Language: Japanese
    Title: 『パワーエレクトロニクスの新展開』第1章、第2節 「SiC単結晶基板の高品質化技術」
    Publisher: シーエムシー出版
    Date of publication: 2009.09
    Author(s): 大谷 昇

    Type of books: Scholarly book
    Authorship：Joint author

  • Language: English
    Title: Wide Bandgap Semiconductors – Fundamental Properties and Modern Photonic and Electronic Devices
    Publisher: Springer, Berlin
    Date of publication: 2007.04
    Author(s): N. Ohtani　edited by Kiyoshi Takahashi, Akihiko Yoshikawa, Adarsh Sandhu

    Type of books: Scholarly book
    Authorship：Joint author

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Industrial Property Rights 【 display / non-display 】

  • Property type:Patent
    Title:METHOD FOR TREATING SURFACE OF SILICON-CARBIDE SUBSTRATE
    Inventor(s)/Creator(s):Tadaaki Kaneko，Noboru Ohtani,Kenta Hagiwara

    Application number:15/096596, 2014.06.06
    Country:United States

  • Property type:Patent
    Title:METHOD FOR MANUFACTURING SEMICONDUCTOR WAFER AND SEMICONDUCTOR WAFER
    Inventor(s)/Creator(s):Tadaaki Kaneko，Noboru Ohtani,Shoji Ushio，他

    Application number:14/240,710, 2012.08.24
    Patent/Registration number:US9,029,219, 2015.05.12
    Country:United States

  • Property type:Patent
    Title:半導体ウエハの製造方法及び半導体ウエハ
    Inventor(s)/Creator(s):金子忠昭，大谷昇，牛尾昌史，他

    Application number:PCT/JP2012/005301, 2012.08.24
    Country:

  • Property type:Patent
    Title:半導体装置、オーミック電極の形成方法、半導体装置の製造方法
    Inventor(s)/Creator(s):金子忠昭，大谷昇，牛尾昌史，他

    Application number:特願2012-052231, 2012.03.08
    Country:Japan

  • Property type:Patent
    Title:半導体ウエハの製造方法及び半導体ウエハ
    Inventor(s)/Creator(s):金子忠昭，大谷昇，牛尾昌史，他

    Application number:特願2011-185181, 2011.08.26
    Publication number:特許第5875143号, 2016.01.29
    Country:Japan

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Presentations 【 display / non-display 】

  • Language:English
    Conference name:European Conference on Silicon Carbide and Related Materials 2014 (ECSCRM2014)
    International/Domestic presentation:International presentation
    Holding date：2014.09
    Title:Structural and electrical characterization of the initial stage of physical vapor transport growth of 4H-SiC crystals
    Presentation type:Oral presentation (invited, special)

  • Language:English
    Conference name:The 6th International Workshop on Crystal Growth Technology (IWCGT-6)
    International/Domestic presentation:International presentation
    Holding date：2014.06
    Title:SiC epitaxial substrate: present status and prospect
    Presentation type:Oral presentation (invited, special)

  • Language:English
    Conference name:European project NetFiSiC -Marie Curie Initial Training Network Tutorial Seminar
    International/Domestic presentation:International presentation
    Holding date：2012.09
    Title:Present status of SiC bulk crystal growth.
    Presentation type:Oral presentation (invited, special)

  • Language:English
    Conference name:220th The Electrochemical Society Meeting
    International/Domestic presentation:International presentation
    Holding date：2011.10
    Title:Toward the reduction of performance-limiting defects in SiC epitaxial substrates.
    Presentation type:Oral presentation (invited, special)

  • Language:Japanese
    Conference name:Electronic Journal第622回Technical Seminar
    International/Domestic presentation:Domestic presentation
    Holding date：2010.11
    Title:SiC単結晶ウェーハ製造技術★徹底解説
    Presentation type:Oral presentation (invited, special)

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