OHTANI Noboru



Degree 【 display / non-display 】
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Degree name:Doctor of Philosophy
Classified degree field:Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electric and electronic materials
Acquisition way:Coursework
Date of acquisition:1993.07
Career 【 display / non-display 】
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Affiliation:Kwansei Gakuin University
Department:School of Science and Technology Department of Nanotechnology for Sustainable Energy
Title:Professor
Date:2015.04 - -
Affiliation:Kwansei Gakuin University
Department:School of Science and Technology Department of Physics
Title:Professor
Date:2011.04 - 2015.03 -
Affiliation:Kwansei Gakuin University
Department:Department reports to President
Title:Professor
Date:2008.04 - 2011.03
Association Memberships 【 display / non-display 】
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Academic society name:応用物理学会
Academic country located:Japan -
Academic society name:日本物理学会
Academic country located:Japan -
Academic society name:日本結晶成長学会
Academic country located:Japan -
Academic society name:The Electrochemical Society
Academic country located:United States
Research Areas 【 display / non-display 】
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Research field:Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electric and electronic materials
Papers 【 display / non-display 】
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Language: English
Title: Formation of basal plane stacking faults on the (000-1) facet of heavily nitrogen-doped 4H-SiC single crystals during physical vapor transport growth
Journal name: Journal of Crystal Growth vol.478 (p.174 - )
Date of publication: 2017.10
Author(s): K. Ohtomo1, N. Matsumoto, K. Ashida, T. Kaneko, N. Ohtani, M. Katsuno, S. Sato, H. Tsuge and T. FujimotoType of publication: Research paper (scientific journal)
Co-author classification: Multiple Authorship
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Language: English
Title: Wide (0001) terrace formation due to step bunching on a vicinal 4H-SiC (0001) epitaxial layer surface
Journal name: Journal of Applied Physics vol.122 (p.075702 - )
Date of publication: 2017.08
Author(s): Y. Tabuchi, K. Ashida, M. Sonoda, T. Kaneko, N. Ohtani, M. Katsuno, S. Sato, H. Tsuge and T. FujimotoType of publication: Research paper (scientific journal)
Co-author classification: Multiple Authorship
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Language: English
Title: Theoretical investigation of the formation of basal plane stacking faults in heavily nitrogen-doped 4H-SiC crystals
Journal name: Journal of Applied Physics vol.119 (p.145704 - )
Date of publication: 2016.10
Author(s): C. Taniguchi, A. Ichimura, N. Ohtani, M. Katsuno, T. Fujimoto, Shinya Sato, H. Tsuge and T. YanoDOI: http://dx.doi.org/10.1063/1.4945773
Type of publication: Research paper (scientific journal)
Co-author classification: Single Author
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Language: English
Title: Surface morphology and step instability on the (000-1)C facet of physical vapor transport-grown 4H-SiC single crystal boules
Journal name: Journal of Crystal Growth vol.431 (p.24 - 31)
Date of publication: 2015.12
Author(s): T. Yamaguchi, K. Ohtomo, Shunsuke Sato, N. Ohtani, M. Katsuno, T. Fujimoto, Shinya Sato, H. Tsuge and T. YanoDOI: http://dx.doi.org/10.1016/j.jcrysgro.2015.09.002
Type of publication: Research paper (scientific journal)
Co-author classification: Single Author
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Language: English
Title: The crystallographic orientation dependence of SEM contrast revealed by SiC polytypes
Journal name: Journal of Vacuum Science & Technology B vol.33 (p.04E104 - )
Date of publication: 2015.07
Author(s): K. Ashida, T. Kajino, Y. Kutsuma, N. Ohtani and T. KanekoDOI: http://dx.doi.org/10.1116/1.4927136
Type of publication: Research paper (scientific journal)
Co-author classification: Single Author
Books 【 display / non-display 】
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Language: Japanese
Title: OHM大学テキスト 固体物性工学
Publisher: オーム社
Date of publication: 2012.10
Author(s): 大谷 昇
Type of books: Scholarly book
Authorship: Joint author
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Language: Japanese
Title: 半導体SiC 技術と応用 第2版
Publisher: 日刊工業新聞社
Date of publication: 2011.09
Author(s): 松波弘之、大谷昇、木本恒暢、中村孝
Type of books: Scholarly book
Authorship: Joint author
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Language: Japanese
Title: 『次世代パワー半導体-省エネルギー社会に向けたデバイス開発の最前線-』第1章、第1編、第1節
Publisher: 株式会社エヌ・ティー・エス
Date of publication: 2009.10
Author(s): 大谷 昇
Type of books: Scholarly book
Authorship: Joint author
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Language: Japanese
Title: 『パワーエレクトロニクスの新展開』第1章、第2節 「SiC単結晶基板の高品質化技術」
Publisher: シーエムシー出版
Date of publication: 2009.09
Author(s): 大谷 昇
Type of books: Scholarly book
Authorship: Joint author
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Language: English
Title: Wide Bandgap Semiconductors – Fundamental Properties and Modern Photonic and Electronic Devices
Publisher: Springer, Berlin
Date of publication: 2007.04
Author(s): N. Ohtani edited by Kiyoshi Takahashi, Akihiko Yoshikawa, Adarsh Sandhu
Type of books: Scholarly book
Authorship: Joint author
Industrial Property Rights 【 display / non-display 】
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Property type:Patent
Title:METHOD FOR TREATING SURFACE OF SILICON-CARBIDE SUBSTRATE
Inventor(s)/Creator(s):Tadaaki Kaneko,Noboru Ohtani,Kenta Hagiwara
Application number:15/096596, 2014.06.06
Country:United States
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Property type:Patent
Title:METHOD FOR MANUFACTURING SEMICONDUCTOR WAFER AND SEMICONDUCTOR WAFER
Inventor(s)/Creator(s):Tadaaki Kaneko,Noboru Ohtani,Shoji Ushio,他
Application number:14/240,710, 2012.08.24
Patent/Registration number:US9,029,219, 2015.05.12
Country:United States
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Property type:Patent
Title:半導体ウエハの製造方法及び半導体ウエハ
Inventor(s)/Creator(s):金子忠昭,大谷昇,牛尾昌史,他
Application number:PCT/JP2012/005301, 2012.08.24
Country:
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Property type:Patent
Title:半導体装置、オーミック電極の形成方法、半導体装置の製造方法
Inventor(s)/Creator(s):金子忠昭,大谷昇,牛尾昌史,他
Application number:特願2012-052231, 2012.03.08
Country:Japan
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Property type:Patent
Title:半導体ウエハの製造方法及び半導体ウエハ
Inventor(s)/Creator(s):金子忠昭,大谷昇,牛尾昌史,他
Application number:特願2011-185181, 2011.08.26
Publication number:特許第5875143号, 2016.01.29
Country:Japan
Presentations 【 display / non-display 】
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Language: English
Conference name: European Conference on Silicon Carbide and Related Materials 2014 (ECSCRM2014)
International/Domestic presentation: International presentation
Holding date: 2014.09
Title: Structural and electrical characterization of the initial stage of physical vapor transport growth of 4H-SiC crystals
Presentation type: Oral presentation (invited, special)
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Language: English
Conference name: The 6th International Workshop on Crystal Growth Technology (IWCGT-6)
International/Domestic presentation: International presentation
Holding date: 2014.06
Title: SiC epitaxial substrate: present status and prospect
Presentation type: Oral presentation (invited, special)
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Language: English
Conference name: European project NetFiSiC -Marie Curie Initial Training Network Tutorial Seminar
International/Domestic presentation: International presentation
Holding date: 2012.09
Title: Present status of SiC bulk crystal growth.
Presentation type: Oral presentation (invited, special)
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Language: English
Conference name: 220th The Electrochemical Society Meeting
International/Domestic presentation: International presentation
Holding date: 2011.10
Title: Toward the reduction of performance-limiting defects in SiC epitaxial substrates.
Presentation type: Oral presentation (invited, special)
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Language: Japanese
Conference name: Electronic Journal第622回Technical Seminar
International/Domestic presentation: Domestic presentation
Holding date: 2010.11
Title: SiC単結晶ウェーハ製造技術★徹底解説
Presentation type: Oral presentation (invited, special)