Personnel Information

写真b

OHTANI Noboru

Organization
School of Engineering Program of Electrical and Electronic Engineering
Research Fields, Keywords
半導体材料, 結晶成長, 欠陥物理
Profile
SiC単結晶の結晶成長並びに結晶欠陥の研究。
Syllabus information URL
https://syllabus.kwansei.ac.jp/uniasv2/UnSSOLoginControlFree?REQ_ACTION_DO=/AGA030PLS01Action.do?REQ_FUNCTION_JUMP_START_FLG=1&SLB_LINK_DISP_FLG=275&TCH_NO=110010&REQ_PRFR_FUNC_ID=AGA030
SDGs Related Goals
To the head of this page.▲

Degree 【 display / non-display 】

  • Degree name:Doctor of Philosophy
    Classified degree field:Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electric and electronic materials
    Acquisition way:Coursework
    Date of acquisition:1993.07

To the head of this page.▲

Career 【 display / non-display 】

  • Affiliation:Kwansei Gakuin University
    Department:School of Science and Technology Department of Nanotechnology for Sustainable Energy
    Title:Professor
    Date:2015.04 -

  • Affiliation:Kwansei Gakuin University
    Department:School of Science and Technology Department of Physics
    Title:Professor
    Date:2011.04 - 2015.03

  • Affiliation:Kwansei Gakuin University
    Department:Department reports to President
    Title:Professor
    Date:2008.04 - 2011.03

To the head of this page.▲

Association Memberships 【 display / non-display 】

  • Academic society name:応用物理学会
    Academic country located:Japan

  • Academic society name:日本物理学会
    Academic country located:Japan

  • Academic society name:日本結晶成長学会
    Academic country located:Japan

  • Academic society name:The Electrochemical Society
    Academic country located:United States

To the head of this page.▲

Research Areas 【 display / non-display 】

  • Research field:Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electric and electronic materials

To the head of this page.▲

Papers 【 display / non-display 】

  • Language: English
    Title: Formation of basal plane stacking faults on the (000-1) facet of heavily nitrogen-doped 4H-SiC single crystals during physical vapor transport growth
    Journal name: Journal of Crystal Growth  vol.478  (p.174 - )
    Date of publication: 2017.10
    Author(s): K. Ohtomo1, N. Matsumoto, K. Ashida, T. Kaneko, N. Ohtani, M. Katsuno, S. Sato, H. Tsuge and T. Fujimoto

    Type of publication: Research paper (scientific journal)
    Co-author classification: Multiple Authorship

  • Language: English
    Title: Wide (0001) terrace formation due to step bunching on a vicinal 4H-SiC (0001) epitaxial layer surface
    Journal name: Journal of Applied Physics  vol.122  (p.075702 - )
    Date of publication: 2017.08
    Author(s): Y. Tabuchi, K. Ashida, M. Sonoda, T. Kaneko, N. Ohtani, M. Katsuno, S. Sato, H. Tsuge and T. Fujimoto

    Type of publication: Research paper (scientific journal)
    Co-author classification: Multiple Authorship

  • Language: English
    Title: Theoretical investigation of the formation of basal plane stacking faults in heavily nitrogen-doped 4H-SiC crystals
    Journal name: Journal of Applied Physics  vol.119  (p.145704 - )
    Date of publication: 2016.10
    Author(s): C. Taniguchi, A. Ichimura, N. Ohtani, M. Katsuno, T. Fujimoto, Shinya Sato, H. Tsuge and T. Yano

    DOI: http://dx.doi.org/10.1063/1.4945773
    Type of publication: Research paper (scientific journal)
    Co-author classification: Single Author

    　 Show links to external sites

  • Language: English
    Title: Surface morphology and step instability on the (000-1)C facet of physical vapor transport-grown 4H-SiC single crystal boules
    Journal name: Journal of Crystal Growth  vol.431  (p.24 - 31)
    Date of publication: 2015.12
    Author(s): T. Yamaguchi, K. Ohtomo, Shunsuke Sato, N. Ohtani, M. Katsuno, T. Fujimoto, Shinya Sato, H. Tsuge and T. Yano

    DOI: http://dx.doi.org/10.1016/j.jcrysgro.2015.09.002
    Type of publication: Research paper (scientific journal)
    Co-author classification: Single Author

    　 Show links to external sites

  • Language: English
    Title: The crystallographic orientation dependence of SEM contrast revealed by SiC polytypes
    Journal name: Journal of Vacuum Science & Technology B  vol.33  (p.04E104 - )
    Date of publication: 2015.07
    Author(s): K. Ashida, T. Kajino, Y. Kutsuma, N. Ohtani and T. Kaneko

    DOI: http://dx.doi.org/10.1116/1.4927136
    Type of publication: Research paper (scientific journal)
    Co-author classification: Single Author

    　 Show links to external sites

display all >>

To the head of this page.▲

Books 【 display / non-display 】

  • Language: Japanese
    Title: OHM大学テキスト 固体物性工学
    Publisher: オーム社
    Date of publication: 2012.10
    Author(s): 大谷 昇

    Type of books: Scholarly book
    Authorship: Joint author

  • Language: Japanese
    Title: 半導体SiC 技術と応用 第2版
    Publisher: 日刊工業新聞社
    Date of publication: 2011.09
    Author(s): 松波弘之、大谷昇、木本恒暢、中村孝

    Type of books: Scholarly book
    Authorship: Joint author

  • Language: Japanese
    Title: 『次世代パワー半導体－省エネルギー社会に向けたデバイス開発の最前線－』第1章、第1編、第1節
    Publisher: 株式会社エヌ・ティー・エス
    Date of publication: 2009.10
    Author(s): 大谷 昇

    Type of books: Scholarly book
    Authorship: Joint author

  • Language: Japanese
    Title: 『パワーエレクトロニクスの新展開』第1章、第2節 「SiC単結晶基板の高品質化技術」
    Publisher: シーエムシー出版
    Date of publication: 2009.09
    Author(s): 大谷 昇

    Type of books: Scholarly book
    Authorship: Joint author

  • Language: English
    Title: Wide Bandgap Semiconductors – Fundamental Properties and Modern Photonic and Electronic Devices
    Publisher: Springer, Berlin
    Date of publication: 2007.04
    Author(s): N. Ohtani　edited by Kiyoshi Takahashi, Akihiko Yoshikawa, Adarsh Sandhu

    Type of books: Scholarly book
    Authorship: Joint author

display all >>

To the head of this page.▲

Industrial Property Rights 【 display / non-display 】

  • Property type:Patent
    Title:METHOD FOR TREATING SURFACE OF SILICON-CARBIDE SUBSTRATE
    Inventor(s)/Creator(s):Tadaaki Kaneko，Noboru Ohtani,Kenta Hagiwara

    Application number:15/096596, 2014.06.06
    Country:United States

  • Property type:Patent
    Title:METHOD FOR MANUFACTURING SEMICONDUCTOR WAFER AND SEMICONDUCTOR WAFER
    Inventor(s)/Creator(s):Tadaaki Kaneko，Noboru Ohtani,Shoji Ushio，他

    Application number:14/240,710, 2012.08.24
    Patent/Registration number:US9,029,219, 2015.05.12
    Country:United States

  • Property type:Patent
    Title:半導体ウエハの製造方法及び半導体ウエハ
    Inventor(s)/Creator(s):金子忠昭，大谷昇，牛尾昌史，他

    Application number:PCT/JP2012/005301, 2012.08.24
    Country:

  • Property type:Patent
    Title:半導体装置、オーミック電極の形成方法、半導体装置の製造方法
    Inventor(s)/Creator(s):金子忠昭，大谷昇，牛尾昌史，他

    Application number:特願2012-052231, 2012.03.08
    Country:Japan

  • Property type:Patent
    Title:半導体ウエハの製造方法及び半導体ウエハ
    Inventor(s)/Creator(s):金子忠昭，大谷昇，牛尾昌史，他

    Application number:特願2011-185181, 2011.08.26
    Publication number:特許第5875143号, 2016.01.29
    Country:Japan

display all >>

To the head of this page.▲

Presentations 【 display / non-display 】

  • Language: English
    Conference name: European Conference on Silicon Carbide and Related Materials 2014 (ECSCRM2014)
    International/Domestic presentation: International presentation
    Holding date: 2014.09

    Title: Structural and electrical characterization of the initial stage of physical vapor transport growth of 4H-SiC crystals
    Presentation type: Oral presentation (invited, special)

  • Language: English
    Conference name: The 6th International Workshop on Crystal Growth Technology (IWCGT-6)
    International/Domestic presentation: International presentation
    Holding date: 2014.06

    Title: SiC epitaxial substrate: present status and prospect
    Presentation type: Oral presentation (invited, special)

  • Language: English
    Conference name: European project NetFiSiC -Marie Curie Initial Training Network Tutorial Seminar
    International/Domestic presentation: International presentation
    Holding date: 2012.09

    Title: Present status of SiC bulk crystal growth.
    Presentation type: Oral presentation (invited, special)

  • Language: English
    Conference name: 220th The Electrochemical Society Meeting
    International/Domestic presentation: International presentation
    Holding date: 2011.10

    Title: Toward the reduction of performance-limiting defects in SiC epitaxial substrates.
    Presentation type: Oral presentation (invited, special)

  • Language: Japanese
    Conference name: Electronic Journal第622回Technical Seminar
    International/Domestic presentation: Domestic presentation
    Holding date: 2010.11

    Title: SiC単結晶ウェーハ製造技術★徹底解説
    Presentation type: Oral presentation (invited, special)

display all >>

To the head of this page.▲