Degree 【 display / non-display 】

  • Degree name:Doctor of Philosophy
    Classified degree field:Electronic materials/Electric materials
    Acquisition way:Coursework
    Date of acquisition:1993.07

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Campus Career 【 display / non-display 】

  • Job function organization:Kwansei Gakuin University Department reports to President
    Career:Professor
    Duties period:2008.04 - 2011.03

  • Job function organization:Kwansei Gakuin University School of Science and Technology Department of Physics
    Career:Professor
    Duties period:2011.04 - 2015.03

  • Job function organization:Kwansei Gakuin University School of Science and Technology Department of Nanotechnology for Sustainable Energy
    Career:Professor
    Duties period:2015.04 -

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Academic Society Affiliations 【 display / non-display 】

  • Affiliated academic society:The Electrochemical Society

    Academic country located:UNITED STATES

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Field of expertise (Grants-in-aid for Scientific Research classification) 【 display / non-display 】

  • Field of expertise (Grants-in-aid for Scientific Research classification):Electronic materials/Electric materials

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Papers 【 display / non-display 】

  • Written language: English
    Title of paper: Formation of basal plane stacking faults on the (000-1) facet of heavily nitrogen-doped 4H-SiC single crystals during physical vapor transport growth
    Publication title: Journal of Crystal Growth  vol.478  (p.174 - )
    Date of issue: 2017.10
    Name of author(s): K. Ohtomo1, N. Matsumoto, K. Ashida, T. Kaneko, N. Ohtani, M. Katsuno, S. Sato, H. Tsuge and T. Fujimoto

    Type of publication: Research paper (scientific journal)
    Co-author classification: Joint Work

  • Written language: English
    Title of paper: Wide (0001) terrace formation due to step bunching on a vicinal 4H-SiC (0001) epitaxial layer surface
    Publication title: Journal of Applied Physics  vol.122  (p.075702 - )
    Date of issue: 2017.08
    Name of author(s): Y. Tabuchi, K. Ashida, M. Sonoda, T. Kaneko, N. Ohtani, M. Katsuno, S. Sato, H. Tsuge and T. Fujimoto

    Type of publication: Research paper (scientific journal)
    Co-author classification: Joint Work

  • Written language: English
    Title of paper: Theoretical investigation of the formation of basal plane stacking faults in heavily nitrogen-doped 4H-SiC crystals
    Publication title: Journal of Applied Physics  vol.119  (p.145704 - )
    Date of issue: 2016.10
    Name of author(s): C. Taniguchi, A. Ichimura, N. Ohtani, M. Katsuno, T. Fujimoto, Shinya Sato, H. Tsuge and T. Yano

    DOI: http://dx.doi.org/10.1063/1.4945773
    Type of publication: Research paper (scientific journal)
    Co-author classification: Single Work

  • Written language: English
    Title of paper: Surface morphology and step instability on the (000-1)C facet of physical vapor transport-grown 4H-SiC single crystal boules
    Publication title: Journal of Crystal Growth  vol.431  (p.24 - 31)
    Date of issue: 2015.12
    Name of author(s): T. Yamaguchi, K. Ohtomo, Shunsuke Sato, N. Ohtani, M. Katsuno, T. Fujimoto, Shinya Sato, H. Tsuge and T. Yano

    DOI: http://dx.doi.org/10.1016/j.jcrysgro.2015.09.002
    Type of publication: Research paper (scientific journal)
    Co-author classification: Single Work

  • Written language: English
    Title of paper: The crystallographic orientation dependence of SEM contrast revealed by SiC polytypes
    Publication title: Journal of Vacuum Science & Technology B  vol.33  (p.04E104 - )
    Date of issue: 2015.07
    Name of author(s): K. Ashida, T. Kajino, Y. Kutsuma, N. Ohtani and T. Kaneko

    DOI: http://dx.doi.org/10.1116/1.4927136
    Type of publication: Research paper (scientific journal)
    Co-author classification: Single Work

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Books 【 display / non-display 】

  • Written language: English
    Book Title: Wide Bandgap Semiconductors – Fundamental Properties and Modern Photonic and Electronic Devices
    Publisher's name: Springer, Berlin
    Date of issue: 2007.04
    Name of author(s): N. Ohtani　edited by Kiyoshi Takahashi, Akihiko Yoshikawa, Adarsh Sandhu

    Type of books: Scholarly Book
    Form of book: Joint Work

  • Written language: English
    Book Title: ワイドギャップ半導体光・電子デバイス
    Publisher's name: 森北出版
    Date of issue: 2006.03
    Name of author(s): 大谷 昇（高橋 清監修、吉川明彦・長谷川文夫編著）

    Type of books: Scholarly Book
    Form of book: Joint Work

  • Written language: English
    Book Title: Sublimation Growth of SiC Single Crystals SiC Power Materials – Devices and Applications, Springer Series in Materials Science Vol. 73, edited by Z.C. Feng, p. 89
    Publisher's name: Springer, Berlin
    Date of issue: 2004.07
    Name of author(s): N. Ohtani, T. Fujimoto, M. Katsuno and H. Yashiro

    Type of books: Scholarly Book
    Form of book: Joint Work

  • Written language: English
    Book Title: Defect Formation and Reduction during Bulk SiC Growth Silicon Carbide, Recent Major Advances, edited by W.J. Choyke, H. Matsunami and G. Pensl, p. 137
    Publisher's name: Springer, Berlin
    Date of issue: 2003.07
    Name of author(s): N. Ohtani, M. Katsuno, T. Fujimoto and H. Yashiro

    Type of books: Scholarly Book
    Form of book: Joint Work

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Presentations 【 display / non-display 】

  • Presentation (Written) language: English
    Conference Name: European Conference on Silicon Carbide and Related Materials 2014 (ECSCRM2014)
    Conference classification: International conference
    Meeting period: 2014.09
    Topic / Session title: Structural and electrical characterization of the initial stage of physical vapor transport growth of 4H-SiC crystals
    Form of presentation: Oral Presentation(guest/special)

  • Presentation (Written) language: English
    Conference Name: The 6th International Workshop on Crystal Growth Technology (IWCGT-6)
    Conference classification: International conference
    Meeting period: 2014.06
    Topic / Session title: SiC epitaxial substrate: present status and prospect
    Form of presentation: Oral Presentation(guest/special)

  • Presentation (Written) language: English
    Conference Name: European project NetFiSiC -Marie Curie Initial Training Network Tutorial Seminar
    Conference classification: International conference
    Meeting period: 2012.09
    Topic / Session title: Present status of SiC bulk crystal growth.
    Form of presentation: Oral Presentation(guest/special)

  • Presentation (Written) language: English
    Conference Name: 220th The Electrochemical Society Meeting
    Conference classification: International conference
    Meeting period: 2011.10
    Topic / Session title: Toward the reduction of performance-limiting defects in SiC epitaxial substrates.
    Form of presentation: Oral Presentation(guest/special)

  • Presentation (Written) language: English
    Conference Name: 5th International Symposium on Advanced Science and Technology of Silicon Materials
    Conference classification: International conference
    Meeting period: 2008.11
    Topic / Session title: Recent progress in SiC single crystal wafer technology.
    Form of presentation: Oral Presentation(guest/special)

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