OHTANI Noboru



Degree 【 display / non-display 】
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Degree name:Doctor of Philosophy
Classified degree field:Electronic materials/Electric materials
Acquisition way:Coursework
Date of acquisition:1993.07
Campus Career 【 display / non-display 】
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Job function organization:Kwansei Gakuin University Department reports to President
Career:Professor
Duties period:2008.04 - 2011.03 -
Job function organization:Kwansei Gakuin University School of Science and Technology Department of Physics
Career:Professor
Duties period:2011.04 - 2015.03 -
Job function organization:Kwansei Gakuin University School of Science and Technology Department of Nanotechnology for Sustainable Energy
Career:Professor
Duties period:2015.04 -
Academic Society Affiliations 【 display / non-display 】
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Affiliated academic society:The Electrochemical Society
Academic country located:UNITED STATES
Field of expertise (Grants-in-aid for Scientific Research classification) 【 display / non-display 】
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Field of expertise (Grants-in-aid for Scientific Research classification):Electronic materials/Electric materials
Papers 【 display / non-display 】
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Written language: English
Title of paper: Formation of basal plane stacking faults on the (000-1) facet of heavily nitrogen-doped 4H-SiC single crystals during physical vapor transport growth
Publication title: Journal of Crystal Growth vol.478 (p.174 - )
Date of issue: 2017.10
Name of author(s): K. Ohtomo1, N. Matsumoto, K. Ashida, T. Kaneko, N. Ohtani, M. Katsuno, S. Sato, H. Tsuge and T. FujimotoType of publication: Research paper (scientific journal)
Co-author classification: Joint Work
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Written language: English
Title of paper: Wide (0001) terrace formation due to step bunching on a vicinal 4H-SiC (0001) epitaxial layer surface
Publication title: Journal of Applied Physics vol.122 (p.075702 - )
Date of issue: 2017.08
Name of author(s): Y. Tabuchi, K. Ashida, M. Sonoda, T. Kaneko, N. Ohtani, M. Katsuno, S. Sato, H. Tsuge and T. FujimotoType of publication: Research paper (scientific journal)
Co-author classification: Joint Work
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Written language: English
Title of paper: Theoretical investigation of the formation of basal plane stacking faults in heavily nitrogen-doped 4H-SiC crystals
Publication title: Journal of Applied Physics vol.119 (p.145704 - )
Date of issue: 2016.10
Name of author(s): C. Taniguchi, A. Ichimura, N. Ohtani, M. Katsuno, T. Fujimoto, Shinya Sato, H. Tsuge and T. YanoDOI: http://dx.doi.org/10.1063/1.4945773
Type of publication: Research paper (scientific journal)
Co-author classification: Single Work
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Written language: English
Title of paper: Surface morphology and step instability on the (000-1)C facet of physical vapor transport-grown 4H-SiC single crystal boules
Publication title: Journal of Crystal Growth vol.431 (p.24 - 31)
Date of issue: 2015.12
Name of author(s): T. Yamaguchi, K. Ohtomo, Shunsuke Sato, N. Ohtani, M. Katsuno, T. Fujimoto, Shinya Sato, H. Tsuge and T. YanoDOI: http://dx.doi.org/10.1016/j.jcrysgro.2015.09.002
Type of publication: Research paper (scientific journal)
Co-author classification: Single Work
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Written language: English
Title of paper: The crystallographic orientation dependence of SEM contrast revealed by SiC polytypes
Publication title: Journal of Vacuum Science & Technology B vol.33 (p.04E104 - )
Date of issue: 2015.07
Name of author(s): K. Ashida, T. Kajino, Y. Kutsuma, N. Ohtani and T. KanekoDOI: http://dx.doi.org/10.1116/1.4927136
Type of publication: Research paper (scientific journal)
Co-author classification: Single Work
Books 【 display / non-display 】
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Written language: English
Book Title: Wide Bandgap Semiconductors – Fundamental Properties and Modern Photonic and Electronic Devices
Publisher's name: Springer, Berlin
Date of issue: 2007.04
Name of author(s): N. Ohtani edited by Kiyoshi Takahashi, Akihiko Yoshikawa, Adarsh Sandhu
Type of books: Scholarly Book
Form of book: Joint Work
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Written language: English
Book Title: ワイドギャップ半導体光・電子デバイス
Publisher's name: 森北出版
Date of issue: 2006.03
Name of author(s): 大谷 昇(高橋 清監修、吉川明彦・長谷川文夫編著)
Type of books: Scholarly Book
Form of book: Joint Work
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Written language: English
Book Title: Sublimation Growth of SiC Single Crystals SiC Power Materials – Devices and Applications, Springer Series in Materials Science Vol. 73, edited by Z.C. Feng, p. 89
Publisher's name: Springer, Berlin
Date of issue: 2004.07
Name of author(s): N. Ohtani, T. Fujimoto, M. Katsuno and H. Yashiro
Type of books: Scholarly Book
Form of book: Joint Work
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Written language: English
Book Title: Defect Formation and Reduction during Bulk SiC Growth Silicon Carbide, Recent Major Advances, edited by W.J. Choyke, H. Matsunami and G. Pensl, p. 137
Publisher's name: Springer, Berlin
Date of issue: 2003.07
Name of author(s): N. Ohtani, M. Katsuno, T. Fujimoto and H. Yashiro
Type of books: Scholarly Book
Form of book: Joint Work
Presentations 【 display / non-display 】
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Presentation (Written) language: English
Conference Name: European Conference on Silicon Carbide and Related Materials 2014 (ECSCRM2014)
Conference classification: International conference
Meeting period: 2014.09
Topic / Session title: Structural and electrical characterization of the initial stage of physical vapor transport growth of 4H-SiC crystals
Form of presentation: Oral Presentation(guest/special)
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Presentation (Written) language: English
Conference Name: The 6th International Workshop on Crystal Growth Technology (IWCGT-6)
Conference classification: International conference
Meeting period: 2014.06
Topic / Session title: SiC epitaxial substrate: present status and prospect
Form of presentation: Oral Presentation(guest/special)
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Presentation (Written) language: English
Conference Name: European project NetFiSiC -Marie Curie Initial Training Network Tutorial Seminar
Conference classification: International conference
Meeting period: 2012.09
Topic / Session title: Present status of SiC bulk crystal growth.
Form of presentation: Oral Presentation(guest/special)
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Presentation (Written) language: English
Conference Name: 220th The Electrochemical Society Meeting
Conference classification: International conference
Meeting period: 2011.10
Topic / Session title: Toward the reduction of performance-limiting defects in SiC epitaxial substrates.
Form of presentation: Oral Presentation(guest/special)
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Presentation (Written) language: English
Conference Name: 5th International Symposium on Advanced Science and Technology of Silicon Materials
Conference classification: International conference
Meeting period: 2008.11
Topic / Session title: Recent progress in SiC single crystal wafer technology.
Form of presentation: Oral Presentation(guest/special)